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High-sensitivity sensor with linear-induced cracks and manufacturing method thereof

A high-sensitivity, sensor technology, applied in the direction of sensors, instruments, force/torque/power measuring instruments, etc., to achieve high economic efficiency

Active Publication Date: 2020-06-23
SEOUL NAT UNIV R&DB FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Cracks are generally considered defects that should be avoided, but recent patterning studies of cracks have reported crack formation in thin films for nanowire and interconnect fabrication, and crack sensors similar to spider sensory systems have been reported for strain and shock Very sensitive but has a limit of only 2% strain

Method used

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  • High-sensitivity sensor with linear-induced cracks and manufacturing method thereof
  • High-sensitivity sensor with linear-induced cracks and manufacturing method thereof
  • High-sensitivity sensor with linear-induced cracks and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0176] Fabrication of a high-sensitivity sensor based on an induction crack

[0177] like image 3 a ~ 3c shown in the manufacture of crack sensors.

[0178] Specifically, using a plasma surface treatment machine CUTE-1MPR (Femto Science Inc.), spin-coated 100 μm polydimethylsiloxane (PDMS) was treated with oxygen plasma and bonded on on the glass. After 20 μl of polyurethane acrylate (PUA) was dropped on the PDMS / glass mold, the filler-patterned silicone mold was covered and treated with 350nm UV (approximately 12mJ / cm 2 ) irradiation. Thermal evaporation was performed by a thermal evaporator (Selcos Inc.) to form a 10 nm patterned chromium layer and a sputtered 20 nm platinum layer was deposited. The PUA film deposited with the metal layer was carefully removed from the PDMA / glass mold and then stretched by 5% in the x / y direction using a custom-made stretcher. Figure 4 The crack sensor before and after stretching is shown in .

[0179] Then, a conductive polymer is ...

Embodiment 2

[0180] Manufacture of multi-pixel array sample

[0181] To demonstrate the scalability and capabilities of devices for detecting mechanical shock and pressure, such as Figure 16 As shown in b, in 6×6cm 2 A sensor network of 16 pixels (4×4 pixel array) is set on the area. Figure 16 a and Figure 16 a shows a schematic diagram of the multi-pixel system. Each pixel (1×1cm 2 Islands) consisted of 100 μm thick PUA / 10 nmCr / 20 nm Pt with a hole pattern, which was then bidirectionally elongated and stretched by 10% to create cracks. The electrical connection between the cracked Pt and the Lab View-based PXI-4071 system (NIinstrument Inc.) was formed by gold wires (Au, 50 nm thick) deposited on the PET film using the hatching method. Each fabricated pixel was placed on a PET film with electrical connections via a conductive polymer (CW2400, Circuit Engineering) or via gold wires in an independent manner.

experiment example 1

[0182] Measuring the change in resistance according to the length of the crack gap (measurement coefficient)

[0183] In order to confirm the effect of linear cracks using the high-sensitivity sensor of Example 1, cracks were formed by using three different hole patterns.

[0184] like Figure 7 In a, P is the shortest distance between the hole centers and is the same in all three test patterns, G is the length of the gap, and the gap represents the shortest distance between the tips of the holes.

[0185] When the length of G is 10μm, 15μm and 20μm, in Image 6 a and Image 6 b and Figure 7 The crack formation patterns and resistance changes are shown in a to 7d.

[0186] Image 6 a shows that when the length of the gap G is 10 μm and 15 μm, several cracks can be induced, while Image 6 b shows that when G is 20 μm, very straight cracks are produced. like Image 6 As shown in a, the presence of many incomplete cracks may reduce the sensitivity to resistance changes,...

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Abstract

Provided is a high-sensitivity sensor having a conductive thin film containing linearly induced cracks. The high-sensitivity sensor relates to a sensor, obtained by forming linearly induced microcracks on a conductive thin film formed on a support, for measuring external tensile and pressure by measuring a change in the electrical resistance due to modification, short-circuiting, or openings in micro-joining structures formed by the microcracks. The high-sensitivity conductive crack sensor may be applied to high-precision measurements or artificial skins, and may be utilized as a positioning detection sensor by pixelating the sensor. Thus, the high-sensitivity sensor may be effectively used in the fields of precise measurements, bio-measurement devices through human skin, human motion measuring sensors, display panel sensors, etc.

Description

technical field [0001] The present invention relates to a high-sensitivity sensor with linear-induced cracks and a manufacturing method thereof, and more particularly to a high-sensitivity sensor applicable to metrology or artificial skin, which uses a conductive thin film formed with linear-induced fine cracks to detect with high precision Tension and pressure. Background technique [0002] Generally speaking, a high-sensitivity sensor senses a tiny signal and transmits the tiny signal as data (such as an electrical signal) that is one of the necessary components in modern industry. [0003] Among these sensors, capacitance sensors, piezoelectric sensors, strain gauges, and the like are known as sensors for measuring pressure or tension. [0004] A strain gauge sensor of a conventional tension sensor is a sensor that detects a mechanical change as an electrical signal. If it is adhered to the surface of a machine or structure, changes in minute dimensions can be measured,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/16G01L1/20G01L5/00A61B5/024A61B5/00
CPCG01L1/205A61B5/024A61B5/441G01B7/18G01L1/20G01L5/00A61B5/02438A61B5/6824G01L1/2287
Inventor 崔瑢桓李泰珉李建熙崔万秀姜大植拜特洛·皮其特撒
Owner SEOUL NAT UNIV R&DB FOUND
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