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Backlight type photoelectric anode and preparing method and application thereof

A photoelectric anode and electrode technology, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., can solve the problems of unsuitable industrial production, cumbersome steps, expensive raw materials, etc.

Inactive Publication Date: 2018-07-20
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The steps of this scheme are cumbersome and the raw materials are expensive. Although it can improve the solar-to-hydrogen conversion efficiency of semiconductor photoanodes, it does not meet the requirements of industrial production.

Method used

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  • Backlight type photoelectric anode and preparing method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] This embodiment provides a method for preparing a back-illuminated photoanode, the specific method of which is:

[0083] (1) Preparation of n by thermal diffusion on p-type silicon + emitter, then the n + The emitter is plated with 70nm-80nm silicon nitride as an anti-reflection layer, and a silver electrode is made on the anti-reflection layer by a screen printing process to obtain a silicon-based solar cell with a pn junction and an exposed anode, which is used as the substrate 2. TiO was prepared on one side of the substrate 2 by atomic layer deposition x Protective film 8, prepare the nickel film that thickness is 100nm with the method for thermal evaporation on protective film 8 again, lead out second electrode 6 on described nickel film and package with sealing material 7, described second electrode 6 uses conductive The slurry is connected to the transition metal film;

[0084] (1') Cover transparent conductive glass 1 on one side of substrate 2, and described...

Embodiment 2

[0092] This embodiment provides a method for preparing a back-illuminated photoanode, the specific method of which is:

[0093] (1) Adopting a commercial copper indium gallium selenide (CIGS) solar cell with a pn junction and an exposed anode as the substrate 2, preparing a nickel-iron alloy film with a thickness of 200 nm by thermal evaporation on one side of the substrate 2, The second electrode 6 is drawn out on the nickel-iron alloy film and packaged with a sealing material 7, and the second electrode 6 is connected to the transition metal film with solder;

[0094] (1') cover transparent conductive glass 1 on one side of substrate 2, described transparent conductive glass 1 and nickel-iron alloy film are respectively positioned at the both sides of described substrate 2, the method of covering transparent conductive glass 1 is welding;

[0095] (2) n from the substrate + One end of the emitter leads to the first electrode, and the first electrode is made of indium galliu...

Embodiment 3

[0101] This embodiment provides a method for preparing a back-illuminated photoanode. For the specific method, refer to Example 1. The difference is:

[0102] In step (1), according to required TiO x The thickness of protective film 8 is adaptively adjusted to the operating conditions of atomic layer deposition, and the method preparation thickness with electron beam evaporation is the nickel film of 10nm, in step (3), according to the thickness of required nickel-iron double metal hydroxide to Adaptive adjustments were made to the electrodeposition operating conditions.

[0103] Refer to Example 1 for the structure of the back-illuminated photoanode prepared in this example. The difference is that the activated transition metal film 3 of the back-illuminated photoanode obtained in this embodiment is an activated nickel film with a thickness of 10 nm, and the transition metal catalyst layer 4 is a nickel-iron double metal hydroxide with a thickness of 10 nm. 2μm, protective ...

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Abstract

The invention provides a backlight type photoelectric anode and a preparing method and application thereof. The photoelectric anode comprises a substrate, an activated transition metal film covering one side of the substrate, a transition metal catalyst layer covering the activated transition metal film, and a first electrode connected with the substrate. The photoelectric anode preparing method comprises the following steps that firstly, the transition metal film is prepared on one side of the substrate; secondly, the transition metal film in the first step is activated, and the activated transition metal film is obtained; thirdly, the transition metal catalyst layer is prepared on the transition metal film activated in the second step; and fourthly, the first electrode is prepared on thesubstrate, and the photoelectric anode is obtained. The photoelectric anode is used for photoelectrochemistry water decomposition. According to the provided photoelectric anode, the technical effectsthat the initial potential of a photoelectrochemistry electrode is obviously reduced, and the photoelectric current density is improved are achieved; and the backlight type photoelectric anode preparing method meets the industrial production requirement.

Description

technical field [0001] The invention belongs to the field of clean energy, and relates to a back-illuminated photoelectric anode, a preparation method and application thereof. Background technique [0002] With the increasingly serious problems of energy shortage and environmental pollution, the development of clean energy has become an imperative means to solve these problems. Photoelectrochemical water splitting is a way to generate clean energy: it uses solar energy to assist water splitting, which can reduce energy consumption in the process of photoelectrochemical water splitting. Semiconductors such as silicon-based materials are good materials for absorbing light energy, but their instability in alkaline electrolytes limits their applications in the field of photoelectrochemistry. People have done a lot of research on this, but most of the solutions do not meet the requirements of industrial production in terms of raw materials and processes [0003] CN107324441A di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B1/04
CPCC25B1/04C25B1/55C25B11/051C25B11/059C25B11/091Y02E60/36
Inventor 郭北斗艾莎·巴图宫建茹
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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