Pulling device and pulling method for growing monocrystalline silicon

Abstract

The invention discloses a pulling device and a pulling method for growing monocrystalline silicon. The device comprises: a first chamber, wherein a tubular reactor for heating and a first crucible arearranged in the first chamber, a gaseous silicon source undergoes a thermal decomposition reaction in the tubular reactor to generate silicon powder, and the silicon powder or molten silicon formed after melting the silicon powder enters the first crucible; a monocrystalline silicon pulling furnace used for pulling the molten silicon used as a raw material to grow the monocrystalline silicon; anda conveying mechanism respectively connected with the first chamber and the monocrystalline silicon pulling furnace, wherein the conveying mechanism is used for introducing the molten silicon in thefirst crucible of the first chamber into the monocrystalline silicon pulling furnace in order to make the molten silicon used as the raw material for the pulling growth of the monocrystalline siliconin the monocrystalline silicon pulling furnace. The device and the method for growing the monocrystalline silicon by using the gaseous silicon source as the raw material omit a step for producing a solid silicon material, so the energy consumption is reduced, and huge investment for producing and processing the solid silicon material is saved.

Description

technical field [0001] The invention belongs to the technical field of crystal silicon growth, and in particular relates to a pulling device and a pulling method for growing single crystal silicon. Background technique [0002] Crystalline silicon is an important raw material for silicon-based semiconductors and solar photovoltaic cells. At present, there are two main methods of growing crystalline silicon: one method is to place solid silicon material in an ingot furnace for ingot casting, and the product produced is polycrystalline silicon, which is mainly used for the manufacture of solar photovoltaic cells after slicing; The first method is to put solid silicon material in a single crystal furnace, and after melting, use the pulling method to grow single crystal silicon rods. Single crystal silicon wafers used in semiconductors and solar photovoltaic cells can be manufactured from single crystal silicon rods. In addition to the above two methods, there is also the zone ...

AI Technical Summary

Problems solved by technology

Chemical vapor deposition or thermal decomposition of gaseous silicon sources is generally carried out at high temperatures, while the production of crystalline silicon from solid silicon materials is generally heated from room temperature to above the melting temperature of silicon. Therefore, from an energy perspective, from high-temperature gaseous silicon sources to It is uneconomical to produce crystalline silicon from solid silicon material at room temperature and then to molten high-temperature silicon liquid

In addition, the production process of solid silicon material itself is relatively complicated and requires special equipment, such as the free space method disclosed in patents CN200580017512 and EP2019084A2. Solid silicon grown from polycrystalline ingots or single crystals

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