Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for testing junction temperature of semiconductor devices driven by rectangular wave signals

A semiconductor and rectangular wave technology, which is applied in the direction of single semiconductor device testing, semiconductor working life testing, instruments, etc., can solve the problems of increased measurement error and the influence of switching speed delay on test accuracy, so as to avoid signal delay and accurate test results Reliable, strong signal-to-noise results

Active Publication Date: 2020-06-23
XIAMEN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the circuit changes, which may cause additional measurement errors, and the switching speed delay has a great impact on the test accuracy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for testing junction temperature of semiconductor devices driven by rectangular wave signals
  • A method for testing junction temperature of semiconductor devices driven by rectangular wave signals
  • A method for testing junction temperature of semiconductor devices driven by rectangular wave signals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides a method for measuring the junction temperature of a semiconductor device using a rectangular wave signal, in which the rectangular wave current signal is used to measure the junction temperature of an LED chip. The waveform of the rectangular wave current signal is as figure 1 As shown, the period is 16s, and the duty cycle is 62.5%. When the rectangular wave current signal is of a large value, the semiconductor device to be tested is in a heating cycle, and the large value is 400mA; when the rectangular wave current signal is of a small value, the semiconductor device to be tested The semiconductor device was in a cooling cycle, and the small amplitude was 1 mA.

[0036] refer to figure 2 , the instrument device for measuring the junction temperature of an LED chip using a rectangular wave current signal is provided with a current source 1, a temperature control platform 2, a high-resolution oscilloscope 3, and a voltage probe 4; in practica...

Embodiment 2

[0050] In this embodiment, a rectangular wave voltage signal is used to drive the LED. At this time, the LED chip 5 needs to be connected in series with a voltage dividing resistor R and then connected to the voltage source. The resistance value of the voltage dividing resistor R does not change with the voltage change. The circuit diagram is shown in Figure 5 . because V=V R +V LED , ΔV R =-△V LED , the change of the voltage at the two terminals of the LED chip 5 due to the temperature is opposite to the change of the voltage at the two terminals of the voltage dividing resistor R. In this embodiment, a voltage dividing resistor R of 4Ω is selected, and the voltage probe can be connected to two terminals of the voltage dividing resistor R or to the two terminals of the LED chip 5 . The waveform of the rectangular wave voltage signal is basically the same as the rectangular wave current in Example 1, with a period of 16s, a duty cycle of 62.5%, a maximum voltage of about ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for measuring the junction temperature of a semiconductor device by using a rectangular wave signal and relates to the technical field of the junction temperature testof semiconductor devices. A device for measuring the junction temperature of a semiconductor device by using a rectangular wave signal is provided with a current source / voltage source for outputting rectangular wave current or voltage of different duty ratios, a high-resolution oscilloscope / digital multimeter, a voltage probe and a temperature control station. A power supply drives a device to betested with a continuous rectangular wave signal. The device to be tested is fixed to a temperature control station, the voltage probe is connected to the device to be tested, and a signal output endof the probe is connected to the high-resolution oscilloscope / digital multimeter. The semiconductor device is driven by the rectangular wave signal, the device to be tested is switched to a test statefrom a heating state without an additional circuit, and an additional signal delay caused by switching is avoided. A voltage difference between a voltage peak at a rising edge of the device to be tested and a voltage stable value after heating is obtained, a temperature difference between a heat sink and a junction is determined by a voltage-temperature sensitivity coefficient, and thus the junction temperature of the device is determined.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to the technical field of junction temperature testing of semiconductor devices. Background technique [0002] A semiconductor device is an electronic device whose conductivity is between a good conductor and an insulator. It uses the special electrical properties of semiconductor materials to complete specific functions. It can be used to generate, control, receive, transform, amplify signals and perform energy conversion. Semiconductor devices are widely used, such as integrated circuits, photodetectors, semiconductor light-emitting diodes (LEDs), semiconductor lasers, photocells, etc., which have made great contributions to national production and life. For semiconductor devices, in order to improve their performance, heat dissipation has always been a problem that requires special attention, and junction temperature testing is an indispensable part of semiconductor device ap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2642
Inventor 吕毅军刘泽晖朱丽虹陈国龙郭自泉林岳高玉琳陈忠
Owner XIAMEN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com