Method for judging Fermi energy level pinning effect of electronic device

A Fermi level, pinning effect technology, applied in the direction of electrical components, semiconductor devices, semiconductor/solid-state device manufacturing, etc., to achieve the effect of simple process and easy operation
CN108335984AActive Publication Date: 2018-07-27HARBIN INST OF TECH

Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
HARBIN INST OF TECH
Publication Date
2018-07-27

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Abstract

The invention relates to a method for judging a Fermi energy level pinning effect of an electronic device and relates to a determination method for the Fermi energy level pinning effect of the electronic device. In order to solve the problem that no determination method for the Fermi energy level pinning effect of the electronic device in a particle radiation environment is generated, the method utilizes software to calculate vacancy numbers generated by a single radiation particle of radiation particles in a chip material, the type and the energy of the radiation particle are determined, radiation test is performed by selecting different radiation injection quantities, the radiation injection points are not less than 3, deep energy level transient spectrum test is performed on the deviceafter radiation, deep energy level transient spectroscopy (DLTS) curves according to different radiation injection quantities are compared, signal peaks corresponding to deep energy level defect and shallow energy level defect are compared, the device material generates Fermi energy level pinning effect if the concentration of the deep energy level defect is raised and the concentration of the shallow energy level defect is reduced with increase of the radiation injection quantity. The method is suitably used for detecting the Fermi energy level pinning effect of the electronic device.
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Description

technical field

[0001] The invention relates to a method for determining the Fermi level pinning effect of an electronic device. Background technique

[0002] With the development of science and technology, people put forward higher and higher requirements for radiation resistance of electronic systems. The neutron radiation produced by the nuclear explosion will cause permanent damage to the semiconductor device, and the Ξ³-ray will cause the signal in the memory to be erased or make the logic operation error. Space and spaceflight technology have increased people's activities in outer space, but cosmic rays and the Van Allen radiation belts around the earth are always challenging the reliability of electronic systems used in outer space flight. The size of the nuclear reactor used by aerospace vehicles and nuclear submarines is limited, so that the control and measurement electronic equipment used cannot be fully shielded from radiation, so improving the radiation resistan...

Claims

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