Method for judging Fermi energy level pinning effect of electronic device
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- HARBIN INST OF TECH
- Publication Date
- 2018-07-27
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Abstract
Description
technical field
[0001] The invention relates to a method for determining the Fermi level pinning effect of an electronic device. Background technique
[0002] With the development of science and technology, people put forward higher and higher requirements for radiation resistance of electronic systems. The neutron radiation produced by the nuclear explosion will cause permanent damage to the semiconductor device, and the Ξ³-ray will cause the signal in the memory to be erased or make the logic operation error. Space and spaceflight technology have increased people's activities in outer space, but cosmic rays and the Van Allen radiation belts around the earth are always challenging the reliability of electronic systems used in outer space flight. The size of the nuclear reactor used by aerospace vehicles and nuclear submarines is limited, so that the control and measurement electronic equipment used cannot be fully shielded from radiation, so improving the radiation resistan...