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Analysis method and system for NBTI (Negative Bias Temperature Instability) degradation prediction under low-frequency alternating current stress mode

An analytical method and stress technology, applied in the field of analytical system, NBTI degradation prediction under low-frequency AC stress mode, can solve the complex problems of NBTI degradation and recovery characteristics

Active Publication Date: 2018-08-03
EAST CHINA NORMAL UNIVERSITY
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Problems solved by technology

Under such dynamic conditions, the NBTI degradation and recovery characteristics become quite complicated

Method used

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  • Analysis method and system for NBTI (Negative Bias Temperature Instability) degradation prediction under low-frequency alternating current stress mode
  • Analysis method and system for NBTI (Negative Bias Temperature Instability) degradation prediction under low-frequency alternating current stress mode
  • Analysis method and system for NBTI (Negative Bias Temperature Instability) degradation prediction under low-frequency alternating current stress mode

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Embodiment Construction

[0056] The present invention will be further described in detail in conjunction with the following specific implementation and accompanying drawings. The process, conditions, experimental methods, etc. for implementing the present invention, except for the content specifically mentioned below, are common knowledge and common knowledge in this field, and the present invention has no special limitation content.

[0057] The analysis method provided by the present invention introduces the innovative NBTI low-frequency AC analysis model, based on the traditional RD theory, taking into account the fast capture / release characteristics of electrons and the H 2 Lock-in effect to accurately account for NBTI degradation in low frequency AC stress mode. Analytic method of the present invention comprises the steps:

[0058] Step 1: Obtain the NBTI degradation RD model parameters of the p-MOSFET device.

[0059] Step 2: Based on the basic reaction-diffusion theory and the locking effect ...

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Abstract

The invention puts forward an analysis method and system for NBTI (Negative Bias Temperature Instability) degradation prediction under a low-frequency alternating current stress mode. The method comprises the following steps that: S1: obtaining the NBTI degradation reaction-diffusion model parameter of a p-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device; S2: on the basis of a basic reaction-diffusion theory and an H2 lock-in effect, obtaining an analysis model for describing an NBTI direct-current pressurization / recovery stage; S3: on the basis of the quick capture / releaseof electrons, obtaining an iterative analysis model of any moment under a described NBTI low-frequency alternating current stress mode, and the non-iterative analysis model of the NBTI of a pressurized ON stage end moment and a recovery OFF stage end moment in an alternating current period; and S4: according to the analysis model, predicting a threshold value voltage degradation situation under the NBTI low-frequency alternating current stress degradation mode of the p-MOSFET device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an analysis method and an analysis system for NBTI degradation prediction under a low-frequency AC stress mode. Background technique [0002] Negative bias temperature instability (NBTI) remains a reliability concern for today's high-k, metal-gate planar MOSFET and FinFET devices. NBTI effect leads to degradation of device parameters such as threshold voltage (ΔV T ) rise, linear and saturated drain current fall, transconductance and subthreshold slope reduction, etc., thereby degrading the performance of digital circuits, analog circuits and memories. In the past decades, the physical mechanism of NBTI has been intensively studied, and different explanations have been generated. The reaction-diffusion theory describes the traps (ΔN IT ), process-related gate insulator origin defects (ΔN HT ) and traps generated inside the gate insulating layer (ΔN OT ) is...

Claims

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Application Information

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IPC IPC(8): G06F17/50G06Q10/04
CPCG06Q10/04G06F30/333G06F30/367G06F2119/04G06F2119/06
Inventor 李小进张珀菁曾严孙亚宾石艳玲
Owner EAST CHINA NORMAL UNIVERSITY
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