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Gas-sensitive element based on titanium dioxide/indium vanadate heterostructure nanometer fiber, and applications thereof

A nanofiber and gas sensor technology, applied in the field of gas sensors, can solve the problems of uneven distribution of heterojunctions, complicated experimental steps, and complicated processes, and achieve good selectivity.

Active Publication Date: 2018-08-21
XIANGTAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] InVO 4 is an n-type semiconductor (bandgap about 2.0) with excellent electrochemical performance, but it has been reported that InVO 4 When the particle is operating at a temperature of 200-400°C, it has almost no response to ammonia at a concentration of 1000ppm (J.ColloidInterf.Sci.295(2006)440-444)
Due to the current preparation of TiO 2 / InVO 4 The heterostructure process is cumbersome, the experimental steps are complicated, and the sample morphology is difficult to control, and the distribution of the heterojunction is uneven, so there is no research on TiO 2 / InVO 4 Report on Gas Sensing Properties of Heterostructures

Method used

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  • Gas-sensitive element based on titanium dioxide/indium vanadate heterostructure nanometer fiber, and applications thereof
  • Gas-sensitive element based on titanium dioxide/indium vanadate heterostructure nanometer fiber, and applications thereof
  • Gas-sensitive element based on titanium dioxide/indium vanadate heterostructure nanometer fiber, and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] (1) 0.68g of tetrabutyl titanate, 1.6g of absolute ethanol, 1.68g of glacial acetic acid and 0.28g of polyvinylpyrrolidone (average molecular weight 1,300,000) were mixed and stirred to form a solution A; 0.18 g of diacetylacetone vanadium oxide, 0.19 g of hydrated indium nitrate (In(NO 3 ) 3 ﹒ 4.5H 2 O), the polyvinylpyrrolidone (average molecular weight of 1,300,000) of 0.16g and the dimethylacetamide of 2g are mixed and stirred to form a solution and recorded as solution B; Finally, the uniformly stirred A solution is mixed with the B solution and stirred uniformly to obtain TBT / In(NO 3 ) 3 / VO(acac) 2 / PVP electrospinning precursor solution.

[0056] (2) Spin the viscous mixed solution C by electrospinning to obtain nanofibers. The specific parameters of electrospinning are as follows: the inner diameter of the electrospinning needle is 0.4 mm, and the distance between the bottom end of the needle and the metal receiving plate is 15cm, the working voltage is ...

Embodiment 2

[0065] (1) Mix 0.34g of tetrabutyl titanate, 0.8g of absolute ethanol, 0.84g of glacial acetic acid and 0.14g of polyvinylpyrrolidone (average molecular weight is 1,300,000) and stir to form a solution that is recorded as solution A; 0.18g of bisacetylacetonate vanadium oxide, 0.19g of hydrated indium nitrate (In(NO 3 ) 3 ﹒ 4.5H 2 O), the polyvinylpyrrolidone (average molecular weight of 1,300,000) of 0.16g and the dimethylacetamide of 2g are mixed and stirred to form a solution and recorded as solution B; Finally, the uniformly stirred A solution is mixed with the B solution and stirred uniformly to obtain TBT / In(NO 3 ) 3 / VO(acac) 2 / PVP electrospinning precursor solution.

[0066] (2) Spin the viscous mixed solution C by electrospinning to obtain nanofibers. The specific parameters of electrospinning are as follows: the inner diameter of the electrospinning needle is 0.4 mm, and the distance between the bottom end of the needle and the metal receiving plate is 15cm, ...

Embodiment 3

[0075] (1) 0.34g of tetrabutyl titanate, 0.8g of absolute ethanol, 0.84g of glacial acetic acid and 0.18g of polyvinylpyrrolidone (average molecular weight 1,300,000) were mixed and stirred to form a solution, which was recorded as solution A; 0.27g of bisacetylacetonate vanadium oxide, 0.38g of hydrated indium nitrate (In(NO 3 ) 3 ﹒ 4.5H 2 O), the polyvinylpyrrolidone of 0.32g (average molecular weight is 1,300,000) and the dimethylacetamide of 4g are mixed and stirred to form a solution and recorded as solution B; Finally, the uniformly stirred A solution is mixed with the B solution and stirred uniformly to obtain TBT / In(NO 3 ) 3 / VO(acac) 2 / PVP electrospinning precursor solution.

[0076] (2) Spin the viscous mixed solution C by electrospinning to obtain nanofibers. The specific parameters of electrospinning are as follows: the inner diameter of the electrospinning needle is 0.4 mm, and the distance between the bottom end of the needle and the metal receiving plate ...

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Abstract

The invention relates to a gas-sensitive element based on TiO2 / InVO4 heterostructure nanometer fiber, and applications thereof. The gas sensitive material in the gas-sensitive element is TiO2 / InVO4 heterostructure nanometer fiber; in the TiO2 / InVO4 heterostructure nanometer fiber, the molar ratio of TiO2 to InVO4 is 0.25-4:1. The gas sensitive material possesses excellent selectivity on ammonia gas; when the temperature is 250 DEG C, and gas concentration is 100ppm, the sensitivity of the gas sensitive material on ammonia gas is 30.5, the response time on ammonia gas is 10s, the recovery timeis 10s. Compared with TiO2 nanometer fiber, the gas sensitivity of the TiO2 / InVO4 heterostructure gas sensitive material obtained via InVO4 coupling modification is improved greatly, the response / recovery time is shortened, and the operating temperature is reduced.

Description

technical field [0001] The present invention relates to a TiO-based 2 / InVO 4 The invention relates to a gas-sensing element of a heterostructured nanofiber and its application, belonging to the field of semiconductor gas-sensing sensors. Background technique [0002] With environmental pollution, gas leakage and production safety problems emerging one after another in recent years, it is one of the major issues to seek an efficient gas sensor. Resistive metal oxide semiconductors have attracted extensive attention due to their good response sensitivity to most gases, low price, and easy preparation (ACS Nano 5, 92–8001 (2011).; Nanoscale 3, 154–165 ( 2011).) TiO 2 As a representative gas-sensitive semiconductor material, semiconductor has the advantages of stable physical and chemical properties, non-toxic, environmentally friendly, etc. (Adv. Funct. A promising semiconductor gas-sensing material. Unfortunately, TiO is limited to a certain extent due to its low sensiti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y30/00B82Y15/00
CPCB82Y15/00B82Y30/00G01N27/127
Inventor 周云欧阳晓平王媛吴涛丁秋杰李珺煜齐福刚刘利新祝文军陈静曹红帅
Owner XIANGTAN UNIV
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