A gas sensor based on titanium dioxide/indium vanadate heterostructure nanofibers and its application

A nanofiber and heterostructure technology, which is applied in the field of gas sensing elements, can solve the problems of uneven distribution of heterojunctions, cumbersome processes, and difficult to control sample morphology, and achieve good selectivity.

Active Publication Date: 2020-08-18
XIANGTAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] InVO 4 is an n-type semiconductor (bandgap about 2.0) with excellent electrochemical performance, but it has been reported that InVO 4 When the particle is operating at a temperature of 200-400°C, it has almost no response to ammonia at a concentration of 1000ppm (J.ColloidInterf.Sci.295(2006)440-444)
Due to the current preparation of TiO 2 / InVO 4 The heterostructure process is cumbersome, the experimental steps are complicated, and the sample morphology is difficult to control, and the distribution of the heterojunction is uneven, so there is no research on TiO 2 / InVO 4 Report on Gas Sensing Properties of Heterostructures

Method used

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  • A gas sensor based on titanium dioxide/indium vanadate heterostructure nanofibers and its application
  • A gas sensor based on titanium dioxide/indium vanadate heterostructure nanofibers and its application
  • A gas sensor based on titanium dioxide/indium vanadate heterostructure nanofibers and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] (1) 0.68g of tetrabutyl titanate, 1.6g of absolute ethanol, 1.6g of glacial acetic acid and 0.28g of polyvinylpyrrolidone (average molecular weight is 1,300,000) are mixed and stirred to form a solution which is designated as solution A; 0.18 g of vanadium oxide diacetylacetonate, 0.19g of hydrated indium nitrate (In(NO 3 ) 3 ﹒ 4.5H 2 (2), the polyvinylpyrrolidone (average molecular weight is 1300000) of 0.16g and the dimethylacetamide of 2g are mixed and stirred and formed solution is recorded as solution B; Finally the A solution that stirs is mixed with B solution and stirred, obtains TBT / In(NO 3 ) 3 / VO(acac) 2 / PVP electrospinning precursor solution.

[0056] (2) The viscous mixed solution C is spun by electrospinning to obtain nanofibers. The specific parameters of electrospinning are as follows: the inner diameter of the electrospinning needle is 0.4 mm, and the distance between the bottom end of the needle and the metal receiving plate is 15cm, the workin...

Embodiment 2

[0065] (1) The tetrabutyl titanate of 0.34g, the dehydrated alcohol of 0.8g, the glacial acetic acid of 0.84g and the polyvinylpyrrolidone (average molecular weight is 1,300,000) of 0.14g are mixed and stirred to form a solution and be designated as solution A; 0.18g of vanadium oxide diacetylacetonate, 0.19g of hydrated indium nitrate (In(NO 3 ) 3 ﹒ 4.5H 2 (2), the polyvinylpyrrolidone (average molecular weight is 1300000) of 0.16g and the dimethylacetamide of 2g are mixed and stirred and formed solution is recorded as solution B; Finally the A solution that stirs is mixed with B solution and stirred, obtains TBT / In(NO 3 ) 3 / VO(acac) 2 / PVP electrospinning precursor solution.

[0066] (2) The viscous mixed solution C is spun by electrospinning to obtain nanofibers. The specific parameters of electrospinning are as follows: the inner diameter of the electrospinning needle is 0.4 mm, and the distance between the bottom end of the needle and the metal receiving plate is ...

Embodiment 3

[0075] (1) The tetrabutyl titanate of 0.34g, the dehydrated alcohol of 0.8g, the glacial acetic acid of 0.84g and the polyvinylpyrrolidone (average molecular weight is 1,300,000) of 0.18g are mixed and stirred to form a solution and be designated as solution A; 0.27g vanadium diacetylacetonate, 0.38g hydrated indium nitrate (In(NO 3 ) 3 ﹒ 4.5H 2 (2), the polyvinylpyrrolidone (average molecular weight is 1,300,000) of 0.32g and the dimethylacetamide of 4g are mixed and stirred and formed solution is denoted as solution B; Finally the A solution that stirs is mixed and stirred with B solution, obtains TBT / In(NO 3 ) 3 / VO(acac) 2 / PVP electrospinning precursor solution.

[0076] (2) The viscous mixed solution C is spun by electrospinning to obtain nanofibers. The specific parameters of electrospinning are as follows: the inner diameter of the electrospinning needle is 0.4 mm, and the distance between the bottom end of the needle and the metal receiving plate is 15cm, the w...

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Abstract

The invention relates to a gas-sensitive element based on TiO2 / InVO4 heterostructure nanometer fiber, and applications thereof. The gas sensitive material in the gas-sensitive element is TiO2 / InVO4 heterostructure nanometer fiber; in the TiO2 / InVO4 heterostructure nanometer fiber, the molar ratio of TiO2 to InVO4 is 0.25-4:1. The gas sensitive material possesses excellent selectivity on ammonia gas; when the temperature is 250 DEG C, and gas concentration is 100ppm, the sensitivity of the gas sensitive material on ammonia gas is 30.5, the response time on ammonia gas is 10s, the recovery timeis 10s. Compared with TiO2 nanometer fiber, the gas sensitivity of the TiO2 / InVO4 heterostructure gas sensitive material obtained via InVO4 coupling modification is improved greatly, the response / recovery time is shortened, and the operating temperature is reduced.

Description

technical field [0001] The invention relates to a TiO-based 2 / InVO 4 The invention relates to a gas sensor of heterostructure nanofiber and its application, belonging to the field of semiconductor gas sensor. Background technique [0002] With the environmental pollution, gas leakage and production safety issues one after another in recent years, seeking a high-efficiency gas sensor is one of the major issues at present. Resistive metal oxide semiconductors have attracted extensive attention due to their good response sensitivity to most gases, low price, and convenient preparation (ACS Nano 5,92–8001(2011).; Nanoscale3,154–165( 2011).)TiO 2 As a representative gas-sensitive semiconductor material, semiconductor has the advantages of stable physical and chemical properties, non-toxic and harmless, and environmental friendliness (Adv. A promising semiconductor gas-sensing material. Unfortunately, due to its low sensitivity, long response / recovery time, and high operatin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12B82Y30/00B82Y15/00
CPCB82Y15/00B82Y30/00G01N27/127
Inventor 周云欧阳晓平王媛吴涛丁秋杰李珺煜齐福刚刘利新祝文军陈静曹红帅
Owner XIANGTAN UNIV
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