Planar anisotropic magnetoresistive film and preparation method thereof

Abstract

The invention discloses a preparation method of a planar anisotropic magnetoresistive film. The preparation method sequentially comprises the following steps: providing a glass substrate; with metal Co as a target material, through reactive magnetron sputtering, depositing a CoO layer on the glass substrate; with La1-xSrxCoO3 as a target material, through magnetron sputtering, depositing a La1-xSrxCoO3 layer on the CoO layer, wherein x is 0.1-0.13; with metal Fe as a target material, through magnetron sputtering, depositing an Fe layer on the La1-xSrxCoO3 layer; with FePt alloy as a target material, through magnetron sputtering, depositing a first FePt layer on the Fe layer; with metal Ni as a target material, through reactive magnetron sputtering, depositing an NiO layer on the first FePtlayer; with metal Fe as a target material, through reactive magnetron sputtering, depositing an Fe3O4 layer on the NiO layer; with FePt alloy as a target material, through reactive magnetron sputtering, depositing a second FePt layer on the Fe3O4 layer. The planar anisotropic magnetoresistive film is high in yield, large in magnetoresistance effect and small in magnetoresistance temperature coefficient, and is suitable to be uses as a device material.

Description

technical field [0001] The invention relates to the field of layered materials, in particular to a planar anisotropic magnetoresistance film and a preparation method thereof. Background technique [0002] The change in resistance of ferromagnetic materials when subjected to an external magnetic field is called the magnetoresistance effect. Regardless of whether the magnetic field is parallel or perpendicular to the current direction, the magnetoresistance effect will be generated. The former (parallel) is called the longitudinal magnetic field effect, and the latter (vertical) is called the transverse magnetic field effect. The magnetoresistivity of general ferromagnetic materials (the ratio of the resistance change caused by the magnetic field to the resistance when no magnetic field is applied) is less than 8% at room temperature. The practical magnetoresistance materials mainly include nickel-iron and nickel-cobalt magnetic alloys. Compared with other magnetic effects,...

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Problems solved by technology

However, the anisotropic magnetoresistance material proposed in the prior art has at least the following defects: 1. The layer structure of NiO and iron oxide plated on LaSrCoO is adopted. The magnetoresistance effect of this layer structure actually depends on the layer structure between the three layers. Therefore, the thickness, crystal structure, composition, and interlayer interface of each layer have a huge impact on the magnetoresistance effect, so it is very difficult to manufacture this layer structure. The yield is very low, and the industry has been looking for other structures to replace this structure; 2. The layer structure is simple, and the electron exchange between each magnetically ordered layer and magnetically disordered layer is not fully utilized, resulting in a small magnetoresistance effect. The anisotropic magnetoresistance effect is small, so it is not suitable to be directly used as a magnetic reading device; 3. The magnetoresistance effect is very sensitive to temperature, and the temperature changes, and the magnitude of the magnetoresistance effect changes too much

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