Planar anisotropic magnetoresistive film and preparation method thereof

An anisotropic magnetic and thin film technology, applied in the direction of measuring magnetic variables, ion implantation plating, coating, etc., can solve the problems of small magnetoresistance effect, small anisotropic magnetoresistance effect, simple layer structure, etc., and achieve magnetic Increased resistance effect, small temperature coefficient of magnetoresistance, avoiding low yield

Active Publication Date: 2018-08-28
泉州嘉德利电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the anisotropic magnetoresistance material proposed in the prior art has at least the following defects: 1. The layer structure of NiO and iron oxide plated on LaSrCoO is adopted. The magnetoresistance effect of this layer structure actually depends on the layer structure between the three layers. Therefore, the thickness, crystal structure, composition, and interlayer interface of each layer have a huge impact on the magnetoresistance effect, so it is very difficult to manufacture this layer structure. The yield is very low, and the indust

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  • Planar anisotropic magnetoresistive film and preparation method thereof
  • Planar anisotropic magnetoresistive film and preparation method thereof
  • Planar anisotropic magnetoresistive film and preparation method thereof

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Example Embodiment

[0020] Example 1

[0021] The planar anisotropic magnetoresistive film was prepared by the following method. Provide a glass substrate; use metal Co as the target material and use reactive magnetron sputtering to deposit a CoO layer on the glass substrate; use La 1-x Sr x CoO 3 As a target, using magnetron sputtering to deposit La on the CoO layer 1-x Sr x CoO 3 Layer, where x = 0.1; using metal Fe as the target material, using magnetron sputtering, in La 1-x Sr x CoO 3 The Fe layer is deposited on the layer; the FePt alloy is used as a target, and the first FePt layer is deposited on the Fe layer by magnetron sputtering; the metal Ni is used as the target, and the first FePt layer is deposited on the first FePt layer by using reactive magnetron sputtering NiO layer; using metallic Fe as the target, using reactive magnetron sputtering to deposit Fe on the NiO layer 3 O 4 Layer; and FePt alloy as a target, using magnetron sputtering, in Fe 3 O 4 A second FePt layer is deposited on ...

Example Embodiment

[0022] Example 2

[0023] The planar anisotropic magnetoresistive film was prepared by the following method. Provide a glass substrate; use Co as the target material and use reactive magnetron sputtering to deposit a CoO layer on the glass substrate; use La 1-x Sr x CoO 3 As a target, using magnetron sputtering to deposit La on the CoO layer 1-x Sr x CoO 3 Layer, where x=0.13; using metal Fe as the target material, using magnetron sputtering, in La 1-x Sr x CoO 3 The Fe layer is deposited on the layer; the FePt alloy is used as the target and the first FePt layer is deposited on the Fe layer by magnetron sputtering; the metal Ni is used as the target and the reactive magnetron sputtering is used to deposit the first FePt layer NiO layer; using metallic Fe as the target, using reactive magnetron sputtering to deposit Fe on the NiO layer 3 O 4 Layer; and FePt alloy as a target, using magnetron sputtering, in Fe 3 O 4 A second FePt layer is deposited on the layer. The thickness of t...

Example Embodiment

[0024] Example 3

[0025] The planar anisotropic magnetoresistive film was prepared by the following method. Provide a glass substrate; use Co as the target material and use reactive magnetron sputtering to deposit a CoO layer on the glass substrate; use La 1-x Sr x CoO 3 As a target, using magnetron sputtering to deposit La on the CoO layer 1-x Sr x CoO 3 Layer, where x=0.12; using metal Fe as the target material, using magnetron sputtering, in La 1-x Sr x CoO 3 The Fe layer is deposited on the layer; the FePt alloy is used as the target and the first FePt layer is deposited on the Fe layer by magnetron sputtering; the metal Ni is used as the target and the reactive magnetron sputtering is used to deposit the first FePt layer NiO layer; using metallic Fe as the target, using reactive magnetron sputtering to deposit Fe on the NiO layer 3 O 4 Layer; and FePt alloy as a target, using magnetron sputtering, in Fe 3 O 4 A second FePt layer is deposited on the layer. The thickness of t...

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Abstract

The invention discloses a preparation method of a planar anisotropic magnetoresistive film. The preparation method sequentially comprises the following steps: providing a glass substrate; with metal Co as a target material, through reactive magnetron sputtering, depositing a CoO layer on the glass substrate; with La1-xSrxCoO3 as a target material, through magnetron sputtering, depositing a La1-xSrxCoO3 layer on the CoO layer, wherein x is 0.1-0.13; with metal Fe as a target material, through magnetron sputtering, depositing an Fe layer on the La1-xSrxCoO3 layer; with FePt alloy as a target material, through magnetron sputtering, depositing a first FePt layer on the Fe layer; with metal Ni as a target material, through reactive magnetron sputtering, depositing an NiO layer on the first FePtlayer; with metal Fe as a target material, through reactive magnetron sputtering, depositing an Fe3O4 layer on the NiO layer; with FePt alloy as a target material, through reactive magnetron sputtering, depositing a second FePt layer on the Fe3O4 layer. The planar anisotropic magnetoresistive film is high in yield, large in magnetoresistance effect and small in magnetoresistance temperature coefficient, and is suitable to be uses as a device material.

Description

technical field [0001] The invention relates to the field of layered materials, in particular to a planar anisotropic magnetoresistance film and a preparation method thereof. Background technique [0002] The change in resistance of ferromagnetic materials when subjected to an external magnetic field is called the magnetoresistance effect. Regardless of whether the magnetic field is parallel or perpendicular to the current direction, the magnetoresistance effect will be generated. The former (parallel) is called the longitudinal magnetic field effect, and the latter (vertical) is called the transverse magnetic field effect. The magnetoresistivity of general ferromagnetic materials (the ratio of the resistance change caused by the magnetic field to the resistance when no magnetic field is applied) is less than 8% at room temperature. The practical magnetoresistance materials mainly include nickel-iron and nickel-cobalt magnetic alloys. Compared with other magnetic effects,...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/16C23C14/18C23C14/35G01R33/09
CPCC23C14/0036C23C14/085C23C14/165C23C14/185C23C14/352G01R33/09
Inventor 韩爱文
Owner 泉州嘉德利电子材料有限公司
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