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Casting method of G8 polycrystalline silicon ingot

A technology of polysilicon ingots and polysilicon furnaces, which is applied in the field of polysilicon solar cells, can solve the problems of polysilicon ingot use and waste that affect the utilization rate of polysilicon, and achieve the effects of low cost, high conversion efficiency and high purity

Inactive Publication Date: 2018-08-28
FORTUNATE SOLAR TECH JIANGSU CO LTD
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Problems solved by technology

[0003] At present, the polysilicon mainly produced in the market is mainly the processing of G2, G4, and at most G6 polysilicon ingots. Due to the influence of production equipment, especially the internal structure of the polysilicon furnace and its common process, it is impossible to complete the processing of higher-grade polysilicon ingots. Production has seriously affected the utilization rate of polysilicon, reduced the use of polysilicon ingots, and caused greater waste. Therefore, in order to improve the utilization rate of polysilicon ingots and reduce the waste of materials, it is necessary to find a production method that meets the requirements of large-scale polysilicon ingots. Control the waste of polysilicon ingots, reduce production costs and improve economic benefits

Method used

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Embodiment Construction

[0021] A casting method of G8 polysilicon ingot, comprising the following steps:

[0022] Step 1) Heating the crucible: place the crucible on a rotary oven for heating;

[0023] Step 2) Prepare the spraying liquid: Put 1.5 parts of desalinated silicon powder, 4.5 parts of deionized water and 0.75 parts of silica sol in the stirring tank for uniform stirring. After the stirring is completed, a desalinated silicon liquid will be formed for later use;

[0024] Step 3) Crucible spraying: When the temperature in the crucible is heated to 70°C or higher, start spraying; use a manual spray gun to evenly spray the desalinated silicon liquid on the inner wall of the crucible, and then dry it for later use;

[0025] Step 4) Loading: Carry out in the order of laying the bottom of the seed crystal material, filling the edge, loading the bottom, placing the silicon material, loading the middle area, loading the third layer of the edge, loading the upper area, and loading the top The order...

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Abstract

The invention discloses a casting method of a G8 polycrystalline silicon ingot. The method comprises the steps of crucible heating, spray coating liquid preparation, crucible spray coating, material charging, material feeding, vacuum pumping, fusion nucleation, crystallization, natural cooling after annealing and obtaining of the G8 polycrystalline silicon ingot. The polycrystalline silicon ingotproduced by using the method provided by the invention has the advantages of short production period and low cost; the silicon ingot reaches grade G8; the weight is 1.2 times of the existing polycrystalline silicon ingot weight; the production rate of the polycrystalline silicon ingot is greatly improved; the obtained polycrystalline silicon chips have the characteristics of uniform crystal particle dimension, high polycrystalline silicon purity, low defect density and high silicon chip conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon solar cells, in particular to a method for casting a G8 polycrystalline silicon ingot. Background technique [0002] The preparation of polycrystalline silicon ingots mainly adopts the crystal growth technology of directional solidification system method, which usually includes the steps of heating, melting, crystal growth, annealing and cooling. [0003] At present, the polysilicon mainly produced in the market is mainly the processing of G2, G4, and at most G6 polysilicon ingots. Due to the influence of production equipment, especially the internal structure of the polysilicon furnace and its ordinary process, it is impossible to complete the processing of higher-level polysilicon ingots. Production has seriously affected the utilization rate of polysilicon, reduced the use of polysilicon ingots, and caused greater waste. Therefore, in order to improve the utilization rate of pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 王海
Owner FORTUNATE SOLAR TECH JIANGSU CO LTD
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