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A metallization layer, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem that the packaging technology cannot meet the requirements of high density, and achieve simple design, simple operation process, and scope of application. wide effect
Inactive Publication Date: 2018-09-04
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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[0002] With the miniaturization, light weight, thinning, high performance, increase in the number of I / O ports and the development of functional diversification of electronic products, traditional packaging technology can no longer meet the requirements of high density.
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Embodiment 1
[0035] Conduct solder resistance test on 0.45μm 96.5Sn3.0Ag0.5Cu solder balls (96.5, 3.0, 0.5 are percentages):
[0037] (2) Etching the semiconductor substrate by dry method;
[0038] (3) Use PVD (Physical vapor deposition) and electroplating methods to prepare the required insulating layer, adhesion layer, seed layer, solderable layer, barrier layer, protective solderable layer, etc. on the semiconductor surface. In Example 1, the insulating layer, adhesion layer, etc. layer, seed layer, solderable layer, barrier layer, protective solderable layer are SiO 2 , Ti, Au, Cu, Ni, Au;
[0039] (4) After the Au layer of the protective solderable layer pad is coated with glue, the Au in the redundant area is corroded;
[0046] (2) Etching the semiconductor substrate by dry method;
[0047] (3) Prepare the required insulating layer, adhesion layer, seed layer, solderable layer, barrier layer, protective solderable layer, etc. on the surface of the semiconductor by methods such as PVD (Physical vapor deposition) and electroplating. In Example 1, the insulating layer, The adhesion layer, seed layer, solderable layer, barrier layer, and protective solderable layer are SiO 2 , Ti, Au, Cu, Ni, Au;
[0048] (4) After the Au layer of the protective solderable layer pad is coated with glue, the Au in the redundant area is corroded;
[0049] (5) Cr layer of sputtering solder resist layer;
[0051] (7) Solder resistance test was performed with 62Sn36Pb2Ag solder balls in a vac...
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Abstract
The invention relates to a semiconductor metallization layer resistance welding method. The method includes the following steps that: (1) waferadhesivecoating, exposing, developing, and drying are carried out; (2) a semiconductor substrate is etched with dry or wet etching; (3) a required insulating layer, adhesion layer, seed layer, solderable layer, barrier layer and protective solderable layer are prepared on the surface of the semiconductor by means of sputtering, evaporation, PVD (Physical vapor deposition), CVD (Chemical vapor deposition), or electroplating; (4) the protective solderable layer at a redundant region is removed by means of etching; (5) a required solder mask is prepared on the surface of the protective solderable layer by means of sputtering, evaporation, PVD, CVD orelectroplating; (6) an automatic scribing machine is adopted to perform wafer scribing; and (7) solder balls are selected for weldinginterconnection. With the method adopted, the problem of resistance welding between a semiconductor metallization layer and solder balls can be solved, and a practically feasible resistance welding method can be provided for resistance welding between the semiconductor metallization layer and the solder balls. The method has the advantages of simple design, high operability and high applicability.
Description
technical field [0001] The invention relates to a method for resisting soldering of a semiconductor metallization layer, which belongs to the technical fields of micro-interconnect solder joint structure preparation, new material technology and semiconductor devicemanufacturing technology, and provides a method for the connection between the semiconductor metallization layer and solder balls. Practical solder mask method. Background technique [0002] With the miniaturization, light weight, thinning, high performance, increase in the number of I / O ports and the development of functional diversification of electronic products, traditional packaging technology can no longer meet the requirements of high density. The development of two-dimensional and three-dimensional stacking technology has brought hope for high-density packaging. High-density two-dimensional and three-dimensional stacking technologies often use tin-based or indium-based solder balls to achieve electrical i...
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