Unlock instant, AI-driven research and patent intelligence for your innovation.

GaN HEMT device capable of reducing on-resistance and improving operational reliability

A technology of on-resistance and reliability, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increased resistance at the end of the strip, lower device reliability, inconsistent electric field distribution, etc., achieve uniform current distribution and improve metal layout , the effect of uniform electric field

Pending Publication Date: 2018-09-04
润新微电子(大连)有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the electrode structure of the existing GaN HEMT device leads to inconsistencies in the electric field distribution between the center line position and the corner position, and the corner is prone to breakdown; moreover, the current distribution in the source electrode and drain electrode is not uniform, and the resistance at the end of the strip increases significantly. Reduced reliability of device operation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN HEMT device capable of reducing on-resistance and improving operational reliability
  • GaN HEMT device capable of reducing on-resistance and improving operational reliability
  • GaN HEMT device capable of reducing on-resistance and improving operational reliability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The GaN HEMT device of the present invention that can reduce on-resistance and improve operational reliability, such as figure 1 , figure 2 Shown: Same as the prior art, from bottom to top are substrate 1, buffer layer 2, GaN channel layer 3, and there is Al on the channel layer 3 0.3 Ga 0.7 The N barrier layer 4, the source electrode 5 and the drain electrode 6 are different from the prior art in that the Al 0.3 Ga 0.7 The N barrier layer 4 is composed of a plurality of rings arranged in a matrix, which can be as figure 1 Shown is a circular ring, and a regular shape such as a square ring can also be used. The outer side of the ring is the source electrode 5 covering the channel layer 3, and the inner side of the ring is the drain electrode 6 covering the channel layer 3. Al 0.3 Ga 0.7 There is a first dielectric passivation layer 21 on the N barrier layer 4, the source electrode 5 and the drain electrode 6, and the gate electrode 7 is located on the first dielec...

Embodiment 2

[0018] The basic structure of embodiment 2 is the same as that of embodiment 1, and the difference from embodiment 1 is that the drain electrode extension electrode 23 is as image 3 Shown is a strip structure connecting each drain electrode 6 .

[0019] The preparation method is the same as in Example 1.

Embodiment 3

[0021] The basic structure of embodiment 3 is the same as that of embodiment 1, but the positions of source electrode 5 and drain electrode 6 are interchanged, and the specific structure is as follows Figure 4 shown. That is, the difference from the prior art is that Al 0.3 Ga 0.7 The N barrier layer 4 is composed of a plurality of rings arranged in a matrix. The outer side of the ring is the drain electrode 6 covering the channel layer 3, and the inner side of the ring is the source electrode 5 covering the channel layer 3. Al 0.3 Ga 0.7 There is a first dielectric passivation layer 21 on the N barrier layer 4, the source electrode 5 and the drain electrode 6, and the gate electrode 7 is located on the first dielectric passivation layer 21 and placed between the source electrode 5 and the drain electrode 6 ring, the lower part of the gate electrode 7 passes through the first dielectric passivation layer 21 to Al 0.3 Ga 0.7 On the surface of the N barrier layer 4, a seco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a GaN HEMT device capable of reducing on-resistance and improving operational reliability. Different from the prior art, an InxAlyGa1-x-yN barrier layer is composed of a plurality of rings arranged in a matrix manner, a source electrode covering a channel layer is arranged on the outer sides of the rings, the inner side of each ring is a drain electrode covering the channellayer, a first dielectric passivation layer is arranged on the InxAlyGa1-x-yN barrier layer, the source electrode and the drain electrodes, grid electrodes are in the shape of rings arranged on the first dielectric passivation layer and placed between the source electrode and the drain electrodes, the lower part of each grid electrode passes through the first dielectric passivation layer to the surface of the InxAlyGa1-x-yN barrier layer, a second dielectric passivation layer covers the upper surfaces of the first dielectric passivation layer and the grid electrodes, a through hole penetrating the first dielectric passivation layer and the second dielectric passivation layer is formed in each drain electrode, and extension electrodes are arranged in the through holes and on the second dielectric passivation layer.

Description

technical field [0001] The invention relates to a GaN HEMT device, in particular to a GaN HEMT device which can reduce on-resistance and improve operation reliability. Background technique [0002] As the third-generation semiconductor material representative after the first-generation semiconductor silicon (Si) and the second-generation semiconductor gallium arsenide (GaAs), gallium nitride (GaN) has unique material characteristics: wide band gap, high temperature resistance, high Electron concentration, high electron mobility, high thermal conductivity, etc., GaN-based high electron mobility transistors (HEMTs) have been widely used in microwave communications and power electronics conversion and other fields. The on-resistance of GaN HEMT devices is a key indicator that affects device performance. For example, the on-resistance of GaN HEMT devices is large, which is reflected in the reduction of output power density in radio frequency devices, and the increase in conducti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/417H01L29/423H01L29/778
CPCH01L29/0696H01L29/41758H01L29/42356H01L29/7787
Inventor 任永硕王荣华
Owner 润新微电子(大连)有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com