LED (Light Emitting Diode) extension structure capable of improving light emission efficiency and growth method of LED extension structure

Abstract

The invention discloses an LED (Light Emitting Diode) extension structure capable of improving light emission efficiency and a growth method of the LED extension structure. In the process that an InGaN / GaN multiple quantum well active layer is grown, an insertion layer is grown between an InGaN quantum well layer and a GaN quantum barrier layer, adjacent to one side opposite to a substrate, of theInGaN quantum well layer, the InGaN quantum well layer is covered with and protected by the insertion layer, then a growth temperature of the GaN quantum barrier layer grown later can be increased, moreover, separation of an In component in the InGaN quantum well layer can be remarkably inhibited, and the flatness of an interface of the InGaN quantum well layer and the barrier layer can be improved; in addition, the insertion layer can be used as a stress compensation layer between the InGaN quantum well layer and the GaN quantum barrier layer, then pressure stress generated between the InGaNquantum well layer and the GaN quantum barrier layer can be counteracted, furthermore formations of defects can be reduced, the radiative recombination efficiency of an active zone can be improved, and the light emission efficiency of an LED can be improved.

Description

technical field [0001] The present invention relates to the technical field of light-emitting diode epitaxy, and more specifically, relates to an LED (Light Emitting Diode, light-emitting diode) epitaxial structure and a growth method thereof that can improve luminous efficiency. Background technique [0002] Blue-green LED has many advantages such as small size, long life, low power consumption, high brightness, and easy integration. It is considered to be a new solid-state light source entering the field of general lighting and display in the 21st century, and it contains huge business opportunities. The current commercial blue-green LEDs use the alloy InGaN material of GaN and InN as the light-emitting active region, and the emission of different wavelengths can be realized by adjusting the In composition in the InGaN quantum well layer. Since the vapor pressure of In atoms is higher than that of Ga atoms, In atoms are difficult to incorporate when growing InGaN quantum w...

AI Technical Summary

Problems solved by technology

However, this growth method will introduce a reduction in crystal quality, so after the InGaN quantum well layer is grown, the temperature in the reaction chamber will be increased to grow the GaN quantum barrier layer

However, high-temperature growth will severely damage the grown InGaN quantum well layer, resulting in the precipitation of In and a decrease in quality.

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