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A kind of method for preparing titanium nitride nano film on the surface of substrate, substrate with film and application thereof

A titanium nitride nanometer and substrate technology, which is applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem that the surface conformality needs to be enhanced, the bonding strength between the film and the substrate is low, and it cannot be realized. Complex structure and other problems, to achieve the effect of reducing the secondary electron emission coefficient, strong controllability of reaction parameters, and expanding the scope of application

Active Publication Date: 2020-07-14
XIAN INSTITUE OF SPACE RADIO TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The controllability of the ultra-thin film (100nm) prepared by the above methods is poor; the bonding strength between the film and the substrate is low, and it is easy to fall off; the surface conformality needs to be enhanced; complex structures, especially uniform coating on the surface of the trap structure cannot be realized

Method used

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  • A kind of method for preparing titanium nitride nano film on the surface of substrate, substrate with film and application thereof
  • A kind of method for preparing titanium nitride nano film on the surface of substrate, substrate with film and application thereof
  • A kind of method for preparing titanium nitride nano film on the surface of substrate, substrate with film and application thereof

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Embodiment 1

[0057] This embodiment provides a metal aluminum substrate with a titanium nitride nano-film, and its preparation method comprises the following steps:

[0058] (1) After ultrasonically cleaning and drying the flat metal aluminum substrate with alcohol, the substrate is transferred to the reaction chamber through the pre-vacuum chamber, and the reaction chamber is evacuated to 1Pa;

[0059] (2) Introduce high-purity nitrogen gas with a purity of 99.99% into the reaction chamber, maintain the air pressure at 40 Pa, heat the reaction chamber to 200° C., and keep it warm for 30 minutes to anneal the substrate;

[0060] (3) Return the annealed substrate to the pre-vacuum chamber, use tetrakis(dimethylamino)titanium as the titanium source, heat the titanium source and the titanium source gas path to 100°C, stabilize for 10min, and then use The ammonia gas plasma and the titanium source carry out 15 scrubbing cycles, wherein, in each of the scrubbing cycles, the flow rate of the amm...

Embodiment 2

[0064] This embodiment provides a metal aluminum substrate with a titanium nitride nano-film, the preparation method of which is basically the same as that of embodiment 1, the only difference is that 20 plasma-enhanced titanium nitride atoms are carried out in step (4). layer deposition cycle.

[0065] In the embodiment of the present invention, the thickness of the titanium nitride nanofilm is 2nm, and the secondary electron emission coefficient of the aluminum substrate used in the embodiment of the present invention and the aluminum substrate with the titanium nitride nanofilm is measured by the current method. The secondary electron emission coefficient of the sheet is 2.35, and the secondary electron emission coefficient of the aluminum substrate with titanium nitride nano film is 1.70.

Embodiment 3

[0067] This embodiment provides a metal aluminum substrate with a titanium nitride nano-film, the preparation method of which is basically the same as that of embodiment 1, the only difference is that 40 plasma-enhanced titanium nitride atoms are carried out in step (4). layer deposition cycle.

[0068] In the embodiment of the present invention, the thickness of the titanium nitride nanofilm is 5nm, and the secondary electron emission coefficient of the aluminum substrate used in the embodiment of the present invention and the aluminum substrate with the titanium nitride nanofilm is measured by the current method, as image 3 As shown, the secondary electron emission coefficient of the aluminum substrate used is 2.35, and the secondary electron emission coefficient of the aluminum substrate with titanium nitride nano film is 1.65.

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Abstract

The invention provides a method for preparing a titanium nitride nano film on a substrate surface, a substrate with the film and application thereof, and belongs to the technical field of secondary electron emission suppression. The method comprises the following steps: transferring a substrate to a reaction chamber through a pre-vacuum chamber, and vacuuming the reaction chamber; introducing an inert gas into the reaction chamber, annealing the substrate; returning the annealed substrate to the pre-vacuum chamber, and using an ammonia gas plasma and a gaseous titanium source for a plurality of gas washing cycles of the reaction chamber; sending the substrate back to the reaction chamber, maintaining the temperature of the reaction chamber at 150 to 220 DEG C, and using the ammonia gas plasma and the gaseous titanium source for plasma enhanced titanium nitride atomic layer deposition reaction to obtain the substrate with the titanium nitride nano film. The ultrathin film prepared by the method has strong controllability, bonding strength between the film and the substrate is high, surface conformality is good, and surface uniformity in complex structures such as plane and porous structures is high.

Description

technical field [0001] The invention relates to a method for preparing a titanium nitride nanometer film on the surface of a substrate, a substrate with the film and an application thereof, and belongs to the technical field of secondary electron emission suppression. Background technique [0002] The phenomenon that electrons with a certain energy bombard the surface of the substrate material and excite electrons escape from the surface of the material is called secondary electron emission. In the field of vacuum electronic devices, secondary electron emission is a widespread physical phenomenon, which has been extensively studied in the fields of particle physics, materials, and semiconductor devices. The research and application of secondary electrons can be simply divided into two aspects: one is to use the physical mechanism of secondary electron emission, and use the electron emission capability of high secondary electron emission coefficient materials as electron sour...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34C23C16/455C23C16/02C23C16/50
CPCC23C16/0209C23C16/34C23C16/45536
Inventor 谢贵柏苗光辉许建丽杨晶崔万照张洪太于洪喜王新波何鋆
Owner XIAN INSTITUE OF SPACE RADIO TECH
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