A method for in-situ luminous flux monitoring and exposure dose compensation

A technology of exposure dose and compensation method, which is applied in microlithography exposure equipment, photolithography exposure device, optics, etc., can solve problems affecting luminous flux, optical element deformation, luminous flux change, etc., to improve device performance and uniform nanostructure Effect
CN108549197BActive Publication Date: 2020-04-17SHANGHAI INST OF APPLIED PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI INST OF APPLIED PHYSICS - CHINESE ACAD OF SCI
Publication Date
2020-04-17

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Abstract

The invention relates to an in-situ luminous flux monitoring and exposure dose compensating method. The method comprises the following steps: measuring the luminous flux of a main light beam going through an exit slit and entering a vacuum chamber before a lithography experiment by using a photodiode, monitoring the intensity of main light beam going through the exit slit and entering the vacuum chamber and the luminous flux of stray lights directly proportional to the main light beam during experimental exposure, and adjusting the exposure time of each lithographic area in real time accordingto the change of the intensity of the stray lights to compensate for the exposure dose in order to keep the exposure dose constant in the XIL large-area exposure pattern splicing process, ensure thatthe nanostructure in the finally obtained large-area exposure pattern is uniform and effectively improve the performances of a device formed by the exposure pattern.
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Description

Technical field

[0001] The invention relates to an in-situ luminous flux monitoring and exposure dose compensation method. Background technique

[0002] X-ray interference lithography (XIL) is a new advanced micro- and nano-processing technology that uses the interference fringes of two or more coherent X-beams to expose photoresist. It can carry out nanostructure processing of tens or even a dozen nanometer cycles . XIL technology is suitable for the preparation of large-area nano-periodic structures with a period of less than 100nm. Compared with other methods such as photolithography, it can obtain high-quality sub-50nm high-density periodic nanostructures more reliably. It is used in nanoelectronics, micro-nano There are a wide range of applications in the fields of optics, nanobiology, nanodevices and materials, and photonic crystals.

[0003] For a single exposure, the area of ​​the exposed pattern obtained by the XIL technology is related to the area of ​​the mask grating....

Claims

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