Method for preparing ZnO thin films with buffer layers

Abstract

The invention discloses a method for preparing ZnO thin films with buffer layers. The method includes steps of S1, cleaning monocrystalline silicon substrates and removing oil stain and impurities onthe surfaces of the monocrystalline silicon substrates; S2, utilizing Al targets as target materials, placing the monocrystalline silicon substrates in vacuum chambers of magnetron sputtering equipment, filling the magnetron sputtering equipment with sputtering gas Ar and reaction gas N2, and sputtering coating AlN buffer layers on the surfaces of the monocrystalline silicon substrates; S3, utilizing Al targets and ZnO targets as target materials, and sputtering coating composite buffer layers comprising AlN and ZnO on the surfaces of the AlN buffer layers; S4, utilizing ZnO targets as targetmaterials, and sputtering coating ZnO film layers on the surfaces of the composite buffer layers to obtain the ZnO thin films with the buffer layers. The method has the advantages that the ZnO film layers can be prevented from being in direct contact with the monocrystalline silicon substrates, and accordingly the crystallization quality of the plated ZnO film layers can be improved; integral procedures are simple magnetron sputtering film coating, are simple and are high in controllability and repeatability.

Description

technical field [0001] The invention relates to a preparation method of a ZnO film with a buffer layer. Background technique [0002] ZnO is a self-activated wide bandgap semiconductor material with a room temperature gap of 3.37eV. It also has higher thermal stability and exciton binding energy, so its excellent photoelectric properties, pressure-sensitive and gas-sensitive properties make it have broad application prospects in many fields such as ultraviolet detectors and solar cells. [0003] Silicon wafer is the core material in current electronic components, and the price is very low, so the preparation of high-performance ZnO thin films on silicon wafers has an attractive prospect. However, due to the large mismatch between the lattice constant and the thermal expansion coefficient of silicon wafers and ZnO, it is difficult to directly prepare high-performance ZnO thin films on silicon wafers to meet the requirements of electronic components. Contents of the inventi...

AI Technical Summary

Problems solved by technology

However, due to the large mismatch between the lattice constant and thermal expansion coefficient of silicon wafers and ZnO, it is difficult to directly prepare high-performance ZnO thin films on silicon wafers to meet the requirements of electronic components.

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