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Manufacturing method of GaN super-junction diode based on epitaxial lateral overgrowth

A technology of lateral epitaxy and diode, which is applied in the direction of diode, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of limited breakdown performance, failure to reach breakdown voltage, single structure, etc., achieve charge balance, and increase breakdown voltage , The effect of simple process

Inactive Publication Date: 2018-09-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current vertical GaN-based diode device has a single structure, limited breakdown performance, and cannot achieve a higher breakdown voltage.

Method used

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  • Manufacturing method of GaN super-junction diode based on epitaxial lateral overgrowth
  • Manufacturing method of GaN super-junction diode based on epitaxial lateral overgrowth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1, making groove shape p-type Al x A GaN super junction diode with a GaN structure layer thickness of 0.5 μm and an Al composition of 0.1.

[0033] Step 1: Doping the GaN substrate material, such as figure 2 (a) shown.

[0034] Do Si element doping on the GaN substrate material with a thickness of 200 μm, and set SiH 4 The flow rate is 5000sccm, and the doping concentration is 1×10 18 cm -3 n-type GaN substrate.

[0035] Step 2: Grow GaN epitaxial layer, such as figure 2 (b) shown.

[0036] GaN epitaxial layer is epitaxially grown on the surface of n-type GaN substrate using MOCVD equipment, and the doping source is SiH 4 , set SiH 4 The flow rate is 50sccm, the time is 70min, the thickness is 1μm, and the doping concentration is 2×10 16 cm -3 Si-doped n-type GaN epitaxial layer.

[0037] Step 3: Etching the GaN epitaxial layer, such as figure 2 (c) shown.

[0038] The n-type GaN epitaxial layer is etched by inductively coupled plasma ICP Cl-b...

Embodiment 2

[0045] Embodiment 2, making groove shape p-type Al x A GaN-based hybrid structure diode with a GaN structure layer thickness of 1 μm and an Al composition of 0.3.

[0046] Step 1: Doping the GaN substrate material, such as figure 2 (a) shown.

[0047] Select a GaN substrate material with a thickness of 300 μm for Si element doping, and set SiH 4 The flow rate is 5000sccm, and the doping concentration is 1×10 18 cm -3 n-type GaN substrate.

[0048] Step 2: growing a GaN epitaxial layer, such as figure 2 (b) shown.

[0049] Set SiH 4 The flow rate is 75sccm, the time is 140min, and the thickness is 2μm, and the doping concentration is 3×10 16 cm -3 Si-doped n-type GaN epitaxial layer.

[0050] Step 3: Etching the GaN epitaxial layer, such as figure 2 (c) shown.

[0051] The n-type GaN epitaxial layer is etched by inductively coupled plasma ICP Cl-based etching, with an etching thickness of 3 μm, an etching width of 3 μm, and an etching interval of 1.5 μm to form m...

Embodiment 3

[0058] Embodiment 3, making groove shape p-type Al x A GaN-based hybrid structure diode with a GaN structure layer thickness of 1.5 μm and an Al composition of 0.5.

[0059] Step A: doping the GaN substrate material with a thickness of 400 μm with Si element, setting SiH 4 The flow rate is 5000sccm, and the doping concentration is 1×10 18 cm -3 n-type GaN substrates, such as figure 2 (a) shown.

[0060] Step B: Setting up SiH 4 The flow rate is 125sccm, the time is 210min, and the epitaxial growth thickness is 3μm on the surface of the n-type GaN substrate by MOCVD equipment, and the doping concentration is 5×10 16 cm -3 Si-doped n-type GaN epitaxial layer, such as figure 2 (b) shown.

[0061] Step C: Etching the n-type GaN epitaxial layer by inductively coupled plasma ICP Cl-based etching to form multiple convex n-type GaN epitaxial layers, with an etching thickness of 3 μm, an etching width of 4 μm, and an etching interval of The distance is 2μm, such as figure ...

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Abstract

The invention discloses a manufacturing method of a GaN super-junction diode based on epitaxial lateral overgrowth and mainly solves the problem that an expected breakdown voltage cannot be reached inthe prior art. The GaN super-junction diode comprises a cathode (1), an n-type GaN substrate (2), an n-type GaN epitaxial layer (3) and an anode (5) from the bottom up. Mg-doped groove-shaped p-typeAlxGaN structure layers (4) are added to the n-type GaN epitaxial layer (3); the p-type AlxGaN structure layers (4) and the n-type GaN epitaxial layer (3) are in alternative distribution in the horizontal direction; a super-junction structure is formed between each groove side wall and the n-type GaN epitaxial layer (3); a pn junction structure is formed between each groove bottom portion and then-type GaN substrate (2); and the value range of the Al component x in the p-type AlxGaN structure layers (4) is 0.1-0.5. The GaN super-junction diode greatly improves breakdown voltage and can be used as a power device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a GaN-based diode manufacturing method, which can be used for power devices. Background technique [0002] Power electronics are used in a wide variety of applications, and power devices play a key role in the areas of power rectification and power switching. GaN-based power devices have attracted wide attention due to their advantages of fast switching speed, high operating temperature, large breakdown voltage, and small on-state resistance. GaN's own special material properties, such as large band gap, high breakdown field strength, high saturation velocity, and high electron gas density, contribute to the superior performance of GaN-based power devices. Today, despite the breakthroughs in GaN-based high electron mobility transistors, there remains a need in the art for improved electronic systems and methods of operating the same. [0003] The structure of GaN-based p...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0615H01L29/0634H01L29/0684H01L29/66204H01L29/861
Inventor 张进成宋豫秦郝跃党魁张涛边照科
Owner XIDIAN UNIV
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