Magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and preparation method thereof

A low thermal expansion coefficient and glass-ceramic technology, applied in the field of electronic ceramic materials, can solve the problems of large thermal expansion coefficient, low thermal expansion coefficient, and high dielectric loss, and achieve low dielectric constant, high bending strength, and low dielectric loss.

Inactive Publication Date: 2018-09-28
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a magnesium-aluminum-silicon-based microcrystal with low thermal expansion coefficient for the problems of high sintering temperature, large thermal expansion coefficient, low bending strength, high dielectric constant, and high dielectric loss in existing cer

Method used

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  • Magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and preparation method thereof
  • Magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and preparation method thereof

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Example Embodiment

[0030] Example 1

[0031] Accurately calculate MgO and Al according to the formula ratio in the above table 2 O 3 , SiO 2 , ZnO, B 2 O 3 , ZrO 2 The actual amount of various raw materials, after accurately weighing, is ball milled for 3 hours to make it evenly mixed and dried; the mixture is melted in a crucible, and heated to 1475℃ for 1 hour. After the ingredients are melted and clarified, the temperature will be lowered and melted. The body is poured into deionized water and quenched to obtain a transparent glass slag; the obtained glass slag is wet-milled and dried to obtain glass powder. According to the basic glass powder and Cr 2 O 3 Mass ratio 100:1 accurately weighs Cr 2 O 3 The required quality, Cr 2 O 3 Mix and mix into the above glass powder, use deionized water and zirconium balls as media for ball milling for 5 hours, dry, sieving, and obtain a uniformly dispersed powder; after granulation and compression molding, the powder is sintered at 950°C And heat preservation...

Example Embodiment

[0033] Example 2

[0034] Accurately calculate MgO and Al according to the formula ratio in the above table 2 O 3 , SiO 2 , ZnO, B 2 O 3 , ZrO 2 The actual amount of various raw materials, after accurately weighing, ball mill for 3 hours to make it evenly mixed and dry; put the mixture in a crucible to melt, heat up to 1475 ℃ for 1.5 hours, after the ingredients are melted and clarified, the temperature will be cooled down and melted The body is poured into deionized water and water-quenched to obtain a transparent glass slag; the obtained glass slag is wet-milled and dried to obtain a glass powder. According to the basic glass powder and Cr 2 O 3 Mass ratio 100:2 accurately weighs Cr 2 O 3 The required quality, Cr 2 O 3 Mixed into the above glass powder, ball milled with deionized water and zirconium balls as the medium for 6 hours, dried and sieved to obtain a uniformly dispersed powder; after granulation, compression molding, the powder is sintered at 925℃ And heat preservation...

Example Embodiment

[0036] Example 3

[0037] Accurately calculate MgO and Al according to the formula ratio in the above table 2 O 3 , SiO 2 , ZnO, B 2 O 3 , ZrO 2 The actual amount of various raw materials, after accurately weighing, is ball milled for 3 hours to make it evenly mixed and dried; the mixture is melted in a crucible, heated to 1450℃ for 1.5 hours, after the ingredients are melted and clarified, the temperature will be lowered and melted The body is poured into deionized water and water-quenched to obtain a transparent glass slag; the obtained glass slag is wet-milled and dried to obtain a glass powder. According to the basic glass powder and Cr 2 O 3 Mass ratio 100:3 accurately weighs Cr 2 O 3 The required quality, Cr 2 O 3 Mixed into the above glass powder, ball milled with deionized water and zirconium balls as the medium for 6 hours, dried and sieved to obtain a uniformly dispersed powder; after granulation, compression molding, the powder is sintered at 925℃ And heat preservation ...

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Abstract

The invention belongs to the field of electronic ceramic materials, and particularly provides a magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and a preparation method thereof which are used for overcoming the problems of high sintering temperature, large thermal expansion coefficient, low bending strength, high dielectric constant, high dielectric loss and the like of an existing ceramic material. The magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and the preparation method thereof have the advantagesthat the prepared low-thermal-expansion-coefficient microcrystalline glass has low thermal expansion coefficient (1.0-2.0*10<-6> per DEG C), high bending strength (150-200 MPa), low dielectric constant (5.0-5.5 @1 MHz), low dielectric loss (1.5-3.5*10<-3> @1 MHz) and reliable insulation, thereby satisfying the requirements of an LTCC electronic package substrate material; the magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material can achieve low-temperature sintering at 900-950 DEG C, the process is simple, the stability is high, the production cost is low, and the magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material is suitable for industrial mass production.

Description

technical field [0001] The invention belongs to the field of electronic ceramic materials, and relates to a magnesium-aluminum-silicon-based low thermal expansion coefficient glass-ceramic material and a preparation method thereof; the material is suitable for electronic packaging, especially for ultra-large-scale integrated circuits. Background technique [0002] The rapid development of information technology promotes the continuous development of integrated circuit systems towards high density, ultra-large scale and multi-functionalization. The rapid improvement of semiconductor chip performance also makes electronic packaging technology develop towards more advanced high-density and three-dimensional packaging. , which puts forward higher requirements for electronic packaging substrate materials. In addition to high enough bending strength and excellent dielectric properties, higher-density integrated circuits have more precise requirements for the thermal expansion coeff...

Claims

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Application Information

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IPC IPC(8): C03C10/08
CPCC03C10/0045
Inventor 李波荆柯
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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