Laminated structure
A stacked structure, sapphire substrate technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problems such as there is no ε-Ga2O3 thin film growth method
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] Metal-organic chemical vapor deposition (MOCVD) method to prepare high-quality ε-Ga 2 o 3 Layered structure of semiconductor crystal film.
[0034] Step 1: Select a clean sapphire substrate with a 0.2° deviation angle between the surface and the c-crystal plane and a thickness of 430 μm.
[0035] Step 2: The substrate is sent into the reaction chamber of the MOCVD equipment, and the tray is rotated at a speed of 750 rpm, ready for the epitaxial growth of the gallium oxide film.
[0036] Step 3: The temperature of the reaction chamber is raised to 550° C.; at the same time, 10 slm of supplementary argon gas is introduced into the reaction chamber, and the pressure of the reaction chamber is controlled at 80 Torr through the pressure control system.
[0037] Step 4: Immerse the bubble bottle filled with triethylgallium and deionized water in two constant temperature water tanks, control the temperature of the bubble bottle at 25°C and 25°C through the constant temperatu...
Embodiment 2
[0044] Preparation of high-quality tin-doped ε-Ga 2 o 3 Layered structure of semiconductor crystal film.
[0045] Step 1: Select a clean sapphire substrate with a 0° deviation angle between the surface and the c-crystal plane and a thickness of 100 μm.
[0046] Step 2: The substrate is sent into the reaction chamber of the MOCVD equipment, and the tray is rotated at a speed of 700 rpm, ready for the epitaxial growth of the gallium oxide film.
[0047] Step 3: The temperature of the reaction chamber is raised to 450° C.; at the same time, 8 slm of argon gas is introduced into the reaction chamber, and the pressure of the reaction chamber is controlled at 20 Torr through the pressure control system.
[0048] Step 4: Immerse the bubbling bottles filled with triethylgallium, deionized water, and tetrakis(dimethylamino)tin in three constant temperature water tanks, and control the temperature of the bubbling bottles to 25°C, 25°C, 2 ℃, and through mass flow meters and pressure g...
Embodiment 3
[0054] Prepare high quality ε-Ga 2 o 3 A stacked structure of a semiconductor PN junction.
[0055] Step 1: Select a clean sapphire substrate with a 10° off angle between the surface and the c crystal plane and a thickness of 1000 μm.
[0056] Step 2: The substrate is sent into the reaction chamber of the MOCVD equipment, and the tray is rotated at a speed of 900 rpm, ready for the epitaxial growth of the gallium oxide film.
[0057] Step 3: The temperature of the reaction chamber is raised to 800° C.; at the same time, 12 slm of argon gas is introduced into the reaction chamber, and the pressure of the reaction chamber is controlled at 400 Torr through the pressure control system.
[0058] Step 4: Immerse the bubbling bottles containing triethylgallium, deionized water, tetrakis(dimethylamino)tin, magnesocene, and ferrocene in five constant temperature water tanks, and control the temperature of the bubbling bottle by the constant temperature water tanks The temperature is...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com