Metal nanowire network and preparation method thereof
A metal nanowire and network technology, applied in nanotechnology, nanotechnology, metal material coating technology and other directions, can solve the problems of difficult to meet actual needs, the electrical conductivity of metal nanowires, etc., to achieve a wide range of applications, electrical conductivity Good, easy-to-prepare effect
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Embodiment 1
[0025] A method for preparing a metal nanowire network, comprising the following steps:
[0026] S1), the cleaned substrate is put into the sputtering apparatus, then vacuumized, at 10 -2 Pa, pass through argon gas, sputter the metal target Pt, and obtain an amorphous metal Pt amorphous nano-film with a thickness of 8nm, wherein the sputtering conditions are: the argon pressure is 0.1Pa, and the sputtering current is 10A , the sputtering time is 100s;
[0027] S2), the prepared metal Pt amorphous nano film is transferred to the tubular annealing furnace, and the nitrogen gas with a purity of 99.999% for 15min is introduced at a flow rate of 0.4L / min, and the oxygen in the tubular furnace is evacuated, and then the The flow rate of nitrogen gas is adjusted to 0.2L / min, and the temperature in the tubular annealing furnace is raised to 600°C at a heating rate of 5°C / min. Slowly shrink, and gradually form a crystalline metal Pt nanowire network with the assistance of nitrogen. ...
Embodiment 2
[0030] A method for preparing a metal nanowire network, comprising the following steps:
[0031] S1), the cleaned substrate is put into the sputtering apparatus, then vacuumized, at 10 -2 Pa, pass through argon, sputter the metal target Au, and obtain an amorphous metal Au nano-film with a thickness of 10nm, wherein the sputtering conditions are: the argon pressure is 0.1Pa, and the sputtering current is 10A , the sputtering time is 80s;
[0032] S2), the prepared metal Pt amorphous nano film is transferred to the tubular annealing furnace, and the nitrogen gas with a purity of 99.999% for 15min is introduced at a flow rate of 0.4L / min, and the oxygen in the tubular furnace is evacuated, and then the The flow rate of nitrogen gas was adjusted to 0.3L / min, and the temperature in the tubular annealing furnace was raised to 400°C at a heating rate of 2°C / min. Slowly shrink, and gradually form a crystalline metal Au nanowire network with the assistance of nitrogen.
Embodiment 3
[0034] The metal Pt nanowire prepared in Example 1 is used to prepare a photodetector, and the photodetector is prepared by continuing epitaxial growth of ZnO on the metal Pt nanowire, such as image 3 As shown, the photodetector includes a substrate layer, a metal Pt nanowire network, an n-type ZnO film epitaxial layer, and an electrode from bottom to top. The specific preparation process is: growing Al-doped n on the metal Pt nanowire network. Type ZnO thin film epitaxial layer with a thickness of 600nm and a carrier concentration of 3.75×10 16 cm-3. Finally, electron beam evaporation forms ohmic contacts and Schottky junctions. On this basis, through the O 2 Annealing under the atmosphere improves the carrier concentration and mobility of the n-type ZnO thin film. The dark current of the prepared ZnO ultraviolet photodetector is only 47pA under 1V bias, and the device is at 359nm under 1V bias. The maximum responsivity reached 0.637A / W,
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