Air-coupled capacitive micromachining ultrasonic transducer, preparation method and application
A technology of capacitive micromachining and ultrasonic transducers, which is applied in chemical instruments and methods, vacuum evaporation plating, fluids using vibration, etc., can solve problems such as slow detection speed, achieve easy matching, low acoustic impedance, and achieve phase The effect of deflection control
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[0047] Example 1
[0048] The purpose of the embodiments of the present invention is to provide a capacitive micro-ultrasonic transducer for ultrasonic nondestructive testing applied to air coupling. The transducer is composed of 16 array elements, and each element is composed of multiple sensitive elements, see figure 2 (A).
[0049] The structure of each sensitive element is composed of upper electrode 3, diaphragm 1, cavity 5, and substrate 2 from top to bottom (wherein, substrate 2 is also used as the bottom electrode), see figure 2 (B).
[0050] A cavity 5 is sandwiched between the diaphragm 1 and the substrate 2 to form a capacitor. A DC voltage is pre-loaded between the upper electrode 3 and the lower electrode 2, so that an electrostatic field is formed in the capacitor. The diaphragm 1 acts on the electric field force. Deformation occurs below, thereby forming a pre-tightening force in the diaphragm 1, and the diaphragm 1 is in a stable equilibrium state.
[0051] When a ca...
Example Embodiment
[0053] Example 2
[0054] Combine below figure 1 The solution in Example 1 is further introduced, as detailed in the following description:
[0055] The overall structure of the embodiment of the present invention is composed of two parts of the diaphragm 1 and the base 2. The diaphragm 1 is composed of an upper electrode 3 and a membrane 4.
[0056] In specific implementation, the thin film 4 may be a single crystal silicon thin film. It can also be set according to actual application needs, which is not limited in the embodiment of the present invention.
[0057] Among them, the material of the upper electrode 3 can be gold, aluminum, etc. In the embodiment of the present invention, a single crystal silicon film is used as a component of the diaphragm 1 and the ultrasonic receiving sensor.
[0058] The substrate 2 is composed of a cavity 5 and an insulating layer 6 together. The material of the insulating layer 6 is silicon dioxide, and the cavity 5 is formed by etching of doped l...
Example Embodiment
[0060] Example 3
[0061] See figure 2 (B), an embodiment of the present invention provides a method for preparing a hollow-coupled ultrasonic transducer, which corresponds to the hollow-coupled ultrasonic transducer in Examples 1 and 2, and the method includes:
[0062] The SOI wafer bonding technology used in the embodiment of the present invention is a bulk silicon process. This technology overcomes the disadvantages of using a sacrificial layer, and processes larger cell sizes through deep etching of the silicon base material, with high processing reliability. The process flow of the SOI wafer bonding process is as follows:
[0063] (A) Prepare a silicon substrate 2. The silicon substrate 2 uses doped low-resistance silicon, which can form a parallel plate capacitor with the top electrode;
[0064] (B) Reactive ion etching (RIE) or wet etching is used to etch the cavity 5 of the target depth at the required position, and the depth of the cavity 5 is 5 μm;
[0065] (C) An insulati...
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