Preparation method of two-dimensional sic material layer
A technology of material layer and copper foil, which is applied in the field of silicon carbide material preparation, can solve the problems of cumbersome process and uneven distribution of two-dimensional SiC material layer, and achieve the effect of simple operation steps, rapid preparation, and uniform and stable performance
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[0028] Please also refer to figure 1 and figure 2 , the preparation method of the two-dimensional SiC material layer provided by the present invention will now be described. The preparation method of the two-dimensional SiC material layer includes the following steps:
[0029] Place the silicon substrate 2 with the copper foil 1 on the upper surface in the reaction chamber;
[0030] Introduce the first gas into the reaction chamber, the main purpose of which is to discharge the air in the reaction chamber, so that the subsequent reaction will not be disturbed by the air;
[0031] The copper foil 1 is heated to a preset reaction temperature, and a second gas is introduced;
[0032] Introduce methane gas, and keep warm for a preset time at a preset reaction temperature;
[0033] Stop feeding the second gas and methane gas, stop heating, feed the first gas again, and cool the copper foil 1 to room temperature at a preset cooling rate;
[0034] The preset reaction temperatur...
Embodiment 1
[0053] In the first step, a copper foil 1 with a thickness of 50 μm is placed on the silicon substrate 2 and placed in a reaction chamber;
[0054] In the second step, 1000 sccm of argon gas is introduced to remove the air in the reaction chamber;
[0055] The third step is to heat to 1100°C and pass in hydrogen gas of 200 sccm, and keep it warm for 30 minutes;
[0056] The fourth step, keep the flow rate of hydrogen constant, feed 2 sccm of methane into the reaction chamber, and keep it warm for 120min;
[0057] The fifth step is to stop methane and hydrogen, stop heating, cool at a preset cooling rate of 200°C / min, and pass in argon to exhaust the methane and hydrogen in the reaction chamber;
[0058] In the sixth step, the reaction is completed, and the preparation of the two-dimensional SiC material layer is completed.
Embodiment 2
[0060] In the first step, a copper foil 1 with a thickness of 50 μm is placed on the silicon substrate 2 and placed in a reaction chamber;
[0061] In the second step, 1000 sccm of argon gas is introduced to remove the air in the reaction chamber;
[0062] The third step is to heat to 1100°C and pass in hydrogen gas of 200 sccm, and keep it warm for 30 minutes;
[0063] The fourth step, keep the flow rate of hydrogen constant, feed 5 sccm of methane into the reaction chamber, and keep it warm for 120min;
[0064] The fifth step is to stop methane and hydrogen, stop heating, cool at a preset cooling rate of 200°C / min, and pass in argon to exhaust the methane and hydrogen in the reaction chamber;
[0065] In the sixth step, the reaction is completed, and the preparation of the two-dimensional SiC material layer is completed.
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