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A thermosetting vinyl silicone resin composition and its application in high-frequency circuit boards

A vinyl silicone, resin composition technology, applied in circuit substrate materials, printed circuits, printed circuit manufacturing and other directions, can solve the requirements of not meeting the adhesion of copper clad laminates, the dielectric loss of the substrate is not low enough, the substrate layer problems such as poor adhesion between the

Active Publication Date: 2021-04-06
GUANGDONG SHENGYI SCI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both of the above two patents use vinyl-modified polyphenylene ether resin as the main resin and vinyl silicone resin as the crosslinking agent. The dielectric loss of the prepared substrate is still not low enough to meet the market's increasing demand for high-frequency substrate dielectric loss. lower demand
[0009] For example, if vinyl silicone resin is used as the whole resin, although the prepared substrate has lower dielectric constant and dielectric loss, the adhesion between the substrate layers is poor, which cannot meet the requirements of the copper-clad laminate for the interlayer adhesion of the substrate. Require

Method used

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  • A thermosetting vinyl silicone resin composition and its application in high-frequency circuit boards
  • A thermosetting vinyl silicone resin composition and its application in high-frequency circuit boards
  • A thermosetting vinyl silicone resin composition and its application in high-frequency circuit boards

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Experimental program
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Effect test

Embodiment 1

[0088] 80.0 parts by weight of three-dimensional random network structure MQ vinyl silicone resin DY-VMQ102, 20.0 parts by weight of vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of free radical initiator DCP, 233.0 parts by weight of silicon Micropowder 525, dissolved in toluene solvent, and adjusted to a suitable viscosity. Use 2116 glass fiber cloth to impregnate the resin glue solution, pass the nip shaft to control the suitable single weight, and dry it in an oven to remove the toluene solvent to obtain 2116 prepreg. Overlap 4 sheets of 2116 prepreg, with copper foil of 1OZ thickness on the upper and lower sides, vacuum lamination and curing in a press for 90min, and the curing pressure is 50kg / cm 2 , the curing temperature is 200°C, and a high-frequency circuit substrate is obtained. The comprehensive performance of the substrate is shown in Table 2.

Embodiment 2

[0090] 80.0 parts by weight of linear vinyl silicone resin DMS-V05, 20.0 parts by weight of vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of free radical initiator DCP, 233.0 parts by weight of silicon micropowder 525, dissolved in toluene solvent and adjust to a suitable viscosity. Use 2116 glass fiber cloth to impregnate the resin glue solution, pass the nip shaft to control the suitable single weight, and dry it in an oven to remove the toluene solvent to obtain 2116 prepreg. Overlap 4 sheets of 2116 prepreg, with copper foil of 1OZ thickness on the upper and lower sides, vacuum lamination and curing in a press for 90min, and the curing pressure is 50kg / cm 2 , the curing temperature is 200°C, and a high-frequency circuit substrate is obtained. The comprehensive performance of the substrate is shown in Table 2.

Embodiment 3

[0092] The cyclic vinyl silicone resin WD-V4 of 80.0 parts by weight, the vinyl modified polyphenylene ether resin SA9000 of 20.0 parts by weight, the free radical initiator DCP of 3.0 parts by weight, the microsilica powder 525 of 233.0 parts by weight, are dissolved in toluene solvent and adjust to a suitable viscosity. Use 2116 glass fiber cloth to impregnate the resin glue solution, pass the nip shaft to control the suitable single weight, and dry it in an oven to remove the toluene solvent to obtain 2116 prepreg. Overlap 4 sheets of 2116 prepreg, with copper foil of 1OZ thickness on the upper and lower sides, vacuum lamination and curing in a press for 90min, and the curing pressure is 50kg / cm 2 , the curing temperature is 200°C, and a high-frequency circuit substrate is obtained. The comprehensive performance of the substrate is shown in Table 2.

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Abstract

The invention relates to a thermosetting vinyl silicone resin composition, the resin composition comprising: linear vinyl silicone resin, ring vinyl silicone resin, three-dimensional random network structure MQ vinyl silicone resin Any one or at least two combinations of vinyl silicone resins; vinyl-modified polyphenylene ether resins; and free radical initiators; the present invention also provides a high-frequency circuit substrate prepared by using the above-mentioned resin composition and its application. The high-frequency circuit substrate of the present invention has low dielectric constant, low dielectric loss, and low water absorption, and the interlayer adhesion can meet the requirements for interlayer adhesion of copper-clad laminates, and at the same time can realize halogen-free and phosphorus-free V-0 grades Flame retardant.

Description

technical field [0001] The invention relates to a composition of vinyl silicone resin, in particular to a thermosetting vinyl silicone resin composition and its application in high-frequency circuit substrates. Background technique [0002] In recent years, with the rapid development of wireless communication technology and electronic products, electronic circuits have entered the stage of high-speed information processing and high-frequency signal transmission. However, when the frequency is greater than 300MHz or even above GHz, the electrical properties of the substrate will be seriously affected. The characteristics of electronic circuits, thus putting forward higher requirements on the performance of the substrate. [0003] In terms of dielectric constant performance, in high-frequency circuits, the transmission rate of the signal is related to the dielectric constant D of the insulating material k The relationship is: insulating material dielectric constant D k The l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L83/07C08L71/12C08K3/36C08K7/14H05K1/03H05K3/02B32B17/02B32B17/06B32B15/20B32B27/04B32B27/30
CPCB32B5/02B32B15/14B32B15/20B32B2260/021B32B2260/046B32B2262/101C08L83/04C08L2201/02C08L2201/08C08L2201/22C08L2203/20C08L2312/00H05K1/0373H05K3/022C08L71/126C08K3/36C08K7/14B32B15/08B32B17/02B32B17/06B32B27/04B32B27/30C08L71/12H05K1/03H05K3/02
Inventor 陈广兵曾宪平
Owner GUANGDONG SHENGYI SCI TECH
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