Variable-wave-length two-dimensional optical rotation device with controllable polarizability and preparation method of variable-wave-length two-dimensional optical rotation device

Abstract

The invention provides a variable-wave-length two-dimensional optical rotation device with controllable polarizability and a preparation method of the variable-wave-length two-dimensional optical rotation device, and relates to generation of continuously adjustable wave length rotation light and regulation and control of polarizability. The device is based on a III-VI group chalcogenide two-dimensional material and a ferromagnetic metal clustering heterostructure, a ferromagnetic metal layer injects a spin polarization current carrier into the III-VI group chalcogenide two-dimensional materialvia an interface coupling effect, and by control over the morphology and dimensional of ferromagnetic metal clusters in the ferromagnetic metal layer, the directions of magnetic moments in the ferromagnetic metal clusters and the magnetic coupling effect of the ferromagnetic metal clusters and the III-VI group chalcogenide two-dimensional material are adjusted; and the band gap width of the III-VI group chalcogenide two-dimensional material is adjusted further through an additional perpendicular electric field, thus, the device generates an optical rotation effect which has controllable spinpolarizability under excitation of incident light, and the wavelength of the optical rotation effect is continuously adjustable in a broad band range from ultraviolet rays to infrared rays.

Description

technical field [0001] The invention relates to the field of optical rotation devices, in particular to a variable wavelength two-dimensional optical rotation device with controllable polarizability and a preparation method thereof. Background technique [0002] The information age puts forward higher requirements on the integration, storage density, operating speed and power consumption of electronic components. Electronic devices that only use the degree of freedom of charge to carry information can never exceed the physical limit of their size. Therefore, another intrinsic property of electrons, spin, has attracted people's attention and expanded the emerging field of spintronics. The combination of electronic spin degree of freedom control and energy band tailoring engineering in modern semiconductor microelectronics and optoelectronics will expand the functions and characteristics of semiconductor devices, and is expected to bring revolutionary changes to future informa...

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Problems solved by technology

Among them, the external stress and vacancy defects often cause different degrees of damage to the lattice structure of the material, and the atomic doping and composition adjustment will also cause the carrier mobility to decrease due to impurity scattering, thereby reducing the optical, electrical and spin properties of the device. Electronic performance

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