Thin film transistor and method for fabricating the same, array substrate, and display device

Abstract

Embodiments of the invention disclose a thin film transistor and a method for fabricating the same, an array substrate, and a display device, wherein the thin film transistor includes: a first gate disposed on one side of a substrate, an active layer, a second gate, and a source / drain electrode; the active layer is disposed on one side of the first gate away from the substrate; the second gate isdisposed on one side of the first gate away from the substrate; the source / drain electrode is disposed on one side of the second gate away from the substrate; and an overlapping area exists between the orthographic projection of the source / drain electrode on the substrate and the orthographic projection of the second gate on the substrate. The embodiments of the invention avoid hydrogen atoms fromentering the active layer in the subsequent process, avoid the threshold voltage negative drift of the thin film transistor, and reduce the leakage current of the thin film transistor, thereby ensuring the dark current decrement and the signal-to-noise ratio during optical detection, and optically compensating the display accurately.

Description

technical field [0001] Embodiments of the present invention relate to the field of display technology, and in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] Organic Light-Emitting Diode (OLED) is one of the hot spots in the field of flat panel display research. Compared with Liquid Crystal Display (LCD), OLED display has low energy consumption, low production cost, self-luminous , wide viewing angle and fast response speed, etc. At present, OLED displays have begun to replace traditional LCD displays in the display fields of mobile phones, tablet computers, and digital cameras. [0003] The problem of brightness attenuation will occur in the working process of OLED display. In order to ensure the uniform and continuous brightness of the display, it is necessary to adopt a suitable compensation method, one of which is optical compensation. Optical compensation is a method that u...

AI Technical Summary

Problems solved by technology

However, the PIN diode will produce more hydrogen atoms during the manufacturing process, and these hydrogen atoms will erode the channel region of the active layer of the thin film transistor, causing the threshold voltage of the TFT to drift negatively, and the leakage current increases, resulting in a dark current during optical detection. Large, the signal-to-noise ratio cannot be guaranteed, and optical compensation cannot be performed accurately

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