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Measuring device for thermal conductivity of continuous silicon carbide film and measuring method thereof

A measuring device and silicon carbide technology, which is applied in the direction of material thermal development, material thermal conductivity, etc., can solve the problems of high requirements for micro-nano fluorescent particles and experimental equipment, and are not easy to promote, so as to solve the problem of damage to the sample surface, realize precise movement, and sensitivity high effect

Active Publication Date: 2018-11-13
中科德胜(常州)电子科技有限公司
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  • Application Information

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Problems solved by technology

However, this method has high requirements on the micro-nano fluorescent particles and experimental equipment used, and needs to determine the temperature coefficient and relationship slope through photoluminescence spectroscopy, which is not easy to popularize

Method used

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  • Measuring device for thermal conductivity of continuous silicon carbide film and measuring method thereof
  • Measuring device for thermal conductivity of continuous silicon carbide film and measuring method thereof
  • Measuring device for thermal conductivity of continuous silicon carbide film and measuring method thereof

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Embodiment Construction

[0035] The above scheme will be further described below in conjunction with specific embodiments.

[0036] see figure 1 , The embodiment of the measuring device for the thermal conductivity of the continuous silicon carbide film is provided with a heat source device, an electronic universal tensile testing machine 1, a temperature measuring device and a computer 7.

[0037] The heat source device is composed of a signal source 8 and a high thermal conductivity spiral resistance wire 4, the signal source 8 is connected to the high thermal conductivity spiral resistance wire 4, the high thermal conductivity spiral resistance wire 4 is in direct contact with the continuous silicon carbide film sample 3, and the signal The sine wave alternating current signal sent by the source 8 heats the continuous silicon carbide film sample 3 through the high thermal conductivity spiral resistance wire 4, and conducts the heat in the two-dimensional (up and down) direction of the film.

[003...

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Abstract

A measuring device for thermal conductivity of a continuous silicon carbide film and a measuring method thereof relate to measurement of the thermal conductivity of the silicon carbide film. The measuring device is provided with a heat source device, an electronic universal tensile testing machine, a temperature measuring device and a computer. The heat source device is composed of a signal sourceand a high thermal conduction spiral resistance wire. The electronic universal tensile testing machine is provided with a sample holding device and can control the moving distance of the sample holding device by a computer program. The temperature measuring device is provided with a non-contact infrared thermometer probe and a lock-in amplifier. The computer can control the moving distance of a clamp of the electronic universal tensile testing machine and can process signals collected by the lock-in amplifier to perform corresponding data analysis. The measuring method utilizes a phase difference value capable of detecting a heat signal at each point on the sample and a heat source signal, and the thermal conductivity of the film can be calculated by image fitting and formula derivation.

Description

technical field [0001] The invention relates to the measurement of the thermal conductivity of a silicon carbide film, in particular to a measuring device and method for measuring the thermal conductivity of a continuous silicon carbide film. Background technique [0002] As an important third-generation wide-bandgap semiconductor film material, silicon carbide film has high thermal conductivity, high breakdown electric field, high carrier drift velocity, low thermal expansion coefficient, corrosion resistance, wear resistance, high mechanical strength, chemical Good stability, suitable for optoelectronic devices, integrated circuits and other fields working in complex environments, has received extensive attention. In recent years, the application of silicon carbide thin films in heat dissipation substrates of high-power devices has received increasing attention, and thermal conductivity has become one of the important parameters to measure its performance. Therefore, it i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/20G01N25/18
CPCG01N25/18G01N25/20
Inventor 姚荣迁郑艺浓褚福临廖亮黄祖晴陈增钟磊韩宇宸
Owner 中科德胜(常州)电子科技有限公司