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Simple preparation method of silicon-tin-graphite alloy

A graphite, simple technology, applied in the field of simple preparation of silicon-tin-graphite alloy, can solve the problems of low capacity contribution, and achieve the effects of high first efficiency, high charge and discharge capacity, and simple process

Inactive Publication Date: 2018-11-13
FUJIAN XFH NEW ENERGY MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high carbon content leads to a low capacity contribution to the overall material
Nevertheless, it remains a great challenge to develop a cost-effective method for fabricating high-capacity, long-period anodes for LIBs.

Method used

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  • Simple preparation method of silicon-tin-graphite alloy
  • Simple preparation method of silicon-tin-graphite alloy

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preparation example Construction

[0016] The invention discloses a simple preparation method of silicon-tin-graphite alloy, comprising the following steps: comprising the following steps:

[0017] (1) Mix silicon powder and tin powder evenly: add 4-8g silicon powder and 3-5g tin powder to a ball mill to disperse, pass argon for protection, ball mill for 15-25H, and the grinding speed is 300-500rpm; then 1 - 3g PVA and 0.3-0.7g graphite were added to the ball-milling jar of the above-mentioned ball mill, ball-milled in air for 8-12H, and the grinding rate was 300-500rpm; the weight ratio of grinding balls to the mixture was kept at 10:1.

[0018] (2) Material annealing process: The above mixture is calcined in a tube furnace, calcined in an argon atmosphere at a temperature of 600-800 °C for 120-180 minutes, and the heating rate is 2-4 °C / min, and then cooled with the furnace.

Embodiment 1

[0021] A simple preparation method of silicon-tin-graphite alloy, comprising the following steps:

[0022] (1) Mix the silicon powder and tin powder evenly: add 6g of silicon powder and 4g of tin powder to the ball mill for dispersion, pass argon for protection, ball mill for 20H, and the grinding speed is 400rpm; then add 2g of PVA and 0.5g of graphite to the above ball mill In the ball-milling jar, ball-milled in air for 10H at a grinding rate of 400rpm; the weight ratio of grinding balls to the mixture was kept at 10:1.

[0023] (2) Material annealing process: The above mixture was calcined in a tube furnace, calcined in an argon atmosphere at a temperature of 700 °C for 150 minutes, and the heating rate was 3 °C / min, and then cooled with the furnace.

[0024] like figure 1 Shown is the scanning electron microscope image of the Si / Sn@C-G composite material obtained in this example, which is represented by figure 1 It can be seen that the microscopic morphology of the prep...

Embodiment 2

[0027] A simple preparation method of silicon-tin-graphite alloy, comprising the following steps: comprising the following steps:

[0028] (1) Mix silicon powder and tin powder evenly: add 8g silicon powder and 4g tin powder to the ball mill to disperse, pass argon for protection, ball mill for 16H, and the grinding speed is 400rpm; then add 1g PVA and 0.4g graphite to the above ball mill In the ball-milling jar, the ball was milled in air for 9H, and the grinding rate was 400 rpm; the weight ratio of grinding balls to the mixture was kept at 10:1.

[0029] (2) Material annealing process: The above mixture was calcined in a tube furnace, calcined in an argon atmosphere at a temperature of 600 °C for 130 minutes, and the heating rate was 2 °C / min, and then cooled with the furnace.

[0030] After testing, in this embodiment, the first discharge capacity is 998.67mAh / g, the first charge capacity is 739.02mAh / g, and the first effect is 74%.

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Abstract

The invention discloses a simple preparation method of a silicon-tin-graphite alloy. The preparation method comprises the following steps: (1) uniformly mixing silicon powder and tin powder: adding 4to 8g of silicon powder and 3 to 5g of tin powder to a ball mill to be dispersed, introducing argon for protection, performing ball-milling for 15 to 25H, controlling the grinding rate to be 300 to 500rpm; then adding 1 to 3g of PVA and 0.3 to 0.7g of graphite to a ball-milling tank of the ball mill, carrying out ball milling for 8 to 12H in air, and controlling the grinding rate to be 300 to 500rpm; keeping the weight ratio of a grinding ball to a mixture at 10: 1; (2) performing a material annealing process: putting the mixture in a tube furnace to be calcined, calcining for 120 to 180min inargon atmosphere at the temperature of 600 to 800 DEG C and controlling the heating rate to be 2 to 4 DEG C / min, then cooling with the furnace. By adopting the method disclosed by the invention, thesilicon powder and the tin powder are firstly mixed uniformly, and then the annealing process is performed to obtain a highly stable silicon-tin-graphite alloy, the process is simple, and the first charge and discharge capacity is high, and the first-time efficiency is also high, and use demands are met, therefore, the simple preparation method of the silicon-tin-graphite alloy is worthy of beingpopularized and used.

Description

technical field [0001] The invention relates to the technology in the field of chemical material preparation, in particular to a simple preparation method of a silicon-tin-graphite alloy. Background technique [0002] At present, lithium-ion batteries have been used in various fields such as mobile phones, electric vehicles, and notebook computers due to their high energy density and good rate capacity. To meet more demanding applications, new electrode materials with long cycle life and high specific capacity are urgently needed. Over the past few decades, commercialized graphite has been shown to be a good anode material in Li-ion batteries, exhibiting high stable capacity retention without significant capacity fading during cycling. However, the low theoretical capacity (372 mAh / g) limits their wide application. To develop high-performance Li-ion batteries, many research efforts have resulted in new and effective anode materials such as Si, Sn, Al, and metal alloys. Am...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/62H01M10/0525
CPCH01M4/362H01M4/386H01M4/387H01M4/62H01M4/625H01M10/0525Y02E60/10
Inventor 赵东辉周鹏伟王晓伟
Owner FUJIAN XFH NEW ENERGY MATERIALS CO LTD
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