Shared type VCSEL (vertical-cavity surface-emitting laser) and HBT (heterojunction bipolar transistor) integrated structure and manufacturing method

Abstract

The invention provides a shared type VCSEL (vertical-cavity surface-emitting laser) and HBT (heterojunction bipolar transistor) integrated structure and a manufacturing method, and belongs to the technical field of compound semiconductor materials and devices. VCSEL and HBT in the structure share an n type InGaP emitter region, a p type GaAs base region and an n type GaAs collector region, and theVCSEL and the HBT are connected in series in the vertical direction to reduce chip area; wet corrosion etching is executed to reach an n type InGaP corrosion barrier layer, annular oxidation is realized by wet oxidation to supply current and light field limit, the n type InGaP corrosion barrier layer, the n type GaAs collector region and the p type GaAs base region are etched in sequence, base electrodes and emitter electrodes are prepared in the p type GaAs base region and the n type InGaP emitter region in sequence, etching grooves are filled with BCB (benzocyclobutene), and VCSEL p face electrodes are prepared. The VCSEL and the HBT are connected in series in the vertical direction, so that the chip area is reduced.

Description

technical field [0001] The invention belongs to the technical field of compound semiconductor materials and devices, and specifically designs a structure of a vertical cavity surface emitting laser (VCSEL) and a heterojunction bipolar transistor (HBT). Background technique [0002] VCSEL is a semiconductor laser whose outgoing light is perpendicular to the surface of the substrate. It has the following advantages: the circular spot is easy to couple with the fiber; the threshold current is small and the energy consumption is low; the cavity length can realize single longitudinal mode operation; it has high relaxation oscillation Frequency can get larger modulation bandwidth; on-chip test can save test cost. As one of the main devices of the laser modulation circuit, HBT has the advantages of high power density, large current gain, low phase noise and good linearity. Usually, the VCSEL is separated from the driver circuit, which greatly increases the cost. In the unexamined...

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Problems solved by technology

In U.S. Published Patent Application 1993 / 5216686, a kind of HBT and VCSEL integrated structure is provided, but because there is no InGaP corrosion barrier layer, the etching depth is difficult to control, and the yield is low; and there is no oxidation limiting layer, which cannot provide a good The current and light field confinement of the

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