Improved ion source repeller shield
An ion source and electrode technology, which is used in the manufacture of ion beam tubes, auxiliary electrodes, cold cathodes, etc., can solve problems such as damage to insulators, shortening the service life of ion sources, and volatile gas escape.
Inactive Publication Date: 2018-11-23
AXCELIS TECHNOLOGIES
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Problems solved by technology
[0007] Common ion source gases such as fluorine or other volatile corrosive species can etch the inside diameter of the cathode and repeller seals over time, allowing volatile gases to escape and damage nearby insulators, such as the repeller assembly insulator
This leak shortens the life of the ion source, necessitating shutting down the ion implanter to replace components
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[0030] The present invention generally relates to ion implantation systems and ion sources associated therewith. More particularly, the present invention relates to improved arc chambers and components associated therewith for ion sources, thereby increasing the productivity of the ion sources.
[0031] With this in mind, the present invention will now be elucidated with reference to the drawings, wherein like reference numerals may be used to refer to like elements throughout. It should be understood that the description of these aspects is for illustration only and is not to be construed for limiting purposes. In the following, for purposes of explanation, several specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without these specific details. In addition, the scope of the present invention should not be limited by the emb...
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An arc chamber has a liner having a recessed surface and a hole having a first diameter. The liner has a lip extending upwardly from the surface toward the surface that surrounds the hole and has a second diameter. An electrode has a shaft and head. The shaft has a third diameter that is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a fourth diameter and a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter that is between the second and fourth diameters. A spacing between the liner lip and electrode lip defines a labyrinth seal and generally prevents contaminants from entering the annular gap.
Description
[0001] References to related applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 317,892, entitled "IMPROVED ION SOURCE REPELLER SHIELD," filed April 4, 2016, the contents of which are incorporated herein by reference in their entirety. technical field [0003] The present invention relates generally to ion implantation systems, and more particularly to an improved ion source repeller shield for increasing the service life of boron nitride seals, thereby generally preventing gas leakage from the ion source. Background technique [0004] In the manufacture of semiconductor devices, ion implantation is used to dope semiconductors with impurities. Ion implantation systems are often utilized to dope workpieces, such as semiconductor wafers, with ions from an ion beam during the manufacture of integrated circuits in order to create doping of n-type or p-type material or to form passivation layers. Such beam processing is commonly use...
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Login to View More IPC IPC(8): H01J27/08H01J9/32H01J37/08
CPCH01J9/32H01J37/08H01J2237/022H01J2237/03H01J2237/31701H01J27/08H01J37/32559H01J37/32431H01J37/32541H01J37/3171G21F1/06H01J2237/0213H01J11/28
Inventor 尼尔·科尔文哲-简·谢保罗·西尔弗斯坦
Owner AXCELIS TECHNOLOGIES