Improved ion source repeller shield

Abstract

An arc chamber has a liner having a recessed surface and a hole having a first diameter. The liner has a lip extending upwardly from the surface toward the surface that surrounds the hole and has a second diameter. An electrode has a shaft and head. The shaft has a third diameter that is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a fourth diameter and a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter that is between the second and fourth diameters. A spacing between the liner lip and electrode lip defines a labyrinth seal and generally prevents contaminants from entering the annular gap.

Description

[0001] References to related applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 317,892, entitled "IMPROVED ION SOURCE REPELLER SHIELD," filed April 4, 2016, the contents of which are incorporated herein by reference in their entirety. technical field [0003] The present invention relates generally to ion implantation systems, and more particularly to an improved ion source repeller shield for increasing the service life of boron nitride seals, thereby generally preventing gas leakage from the ion source. Background technique [0004] In the manufacture of semiconductor devices, ion implantation is used to dope semiconductors with impurities. Ion implantation systems are often utilized to dope workpieces, such as semiconductor wafers, with ions from an ion beam during the manufacture of integrated circuits in order to create doping of n-type or p-type material or to form passivation layers. Such beam processing is commonly use...

AI Technical Summary

Problems solved by technology

[0007] Common ion source gases such as fluorine or other volatile corrosive species can etch the inside diameter of the cathode and repeller seals over time, allowing volatile gases to escape and damage nearby insulators, such as the repeller assembly insulator

This leak shortens the life of the ion source, necessitating shutting down the ion implanter to replace components

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