Visible light-intermediate infrared detector based on antimonide and preparation method thereof

Abstract

The invention provides a visible light-intermediate infrared detector based on antimonide and a preparation method thereof. The visible light-intermediate infrared detector comprises the following function layers sequentially including a substrate, a buffer layer, a medium wave passage ohmic contact layer, a medium wave passage absorption layer, two tunneling layers, a visible light passage absorption layer, a visible light passage ohmic contact layer and a cover layer from the substrate in the epitaxial growth direction. The visible light-intermediate infrared detector based on antimonide provided by the invention has a double-absorption-layer structure, and has the advantages that the visible light wave band response is high; the structure is simple; the preparation process is simple; the requirement of the visible light-intermediate infrared detector on the visible light high response performance is met; the foundation is laid for the detection of a high-performance antimonide device from visible light to medium wave infrared wide spectrum.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an antimonide-based visible light-mid-infrared detector and a preparation method thereof. Background technique [0002] Photodetectors are widely used in various fields of military and national economy. They are mainly used for ray measurement and detection, industrial automatic control, photometry, etc. in the visible or near-infrared band; they are used in missile guidance, infrared thermal imaging, Infrared remote sensing, etc. In recent years, spectral detection has gradually become popular, especially in bionics, skin perception, color imaging and other fields. [0003] However, the current detection from visible to infrared mainly depends on evaporating a specific anti-reflection film on the infrared detection unit or etching a specific microcolumn structure on the surface of the detection unit through photolithography and plasma etching, so as to...

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Problems solved by technology

However, the etching process of the micro-column needs to increase the process steps of the detector and the precision of photolithography and etching, and the difficulty of the device process increases sharply, resulting in a decrease in device reliability.

Secondly, since the micropillar etching increases the sidewall area of ​​the device, the sidewall leakage increases significantly, which increases the difficulty of surface passivation of the device, which is not conducive to improving the signal-to-noise ratio of the device

Moreover, the spectral matching of the above two methods is poor, and the response to visible light and near-infrared bands is not significantly improved, and the effect is not ideal.

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