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MWT solar cell and preparation method thereof

A technology for solar cells and electrodes, applied in the field of solar cells, can solve the problems of difficult passivation of the n+ surface and doping of the whole surface of the polysilicon film, and achieve the effect of solving the problems of short circuit and leakage

Pending Publication Date: 2018-11-30
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Utilizing the structure on the n-type MWT battery can solve the problem of difficult passivation of the n+ side on the back; however, the polysilicon film is doped on the entire surface, and there will be a leakage short circuit problem if it is directly used on the MWT battery

Method used

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  • MWT solar cell and preparation method thereof
  • MWT solar cell and preparation method thereof
  • MWT solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] Such as figure 1 As shown, the MWT solar cell provided in this implementation includes an n-type silicon substrate 1, in which a through hole 2 leading the front electrode to the back is provided, and a dielectric film 3 is provided on the back of the n-type silicon substrate 1 , the dielectric film 3 is provided with a selectively doped polysilicon film 4, the selectively doped polysilicon film 4 includes a non-doped polysilicon film 41 and a doped polysilicon film 42, the non-doped polysilicon film 41 surrounds the through hole 2, and the remaining area Then it is the doped polysilicon film 42 .

[0087] from figure 1 It can be known from the structure of the solar cell that the through hole 2 is surrounded by the non-doped polysilicon film 41, which can electrically insulate and isolate the lead in the through hole 2 for connecting the front electrode to the back, thereby reducing or avoiding leakage and short circuit.

[0088] The region of the non-doped polysilic...

Embodiment 2

[0116] The difference from Example 1 is that in this MWT solar cell, the back contact electrode 11 is a whole-surface metal electrode except the front electrode.

[0117] The dielectric film 3 is a silicon dioxide monolayer film with a thickness of 1.5 nm.

[0118] The doped polysilicon film is a phosphorus-doped polysilicon film, and its doping concentration is 1.0E 19 atoms / cm 3 -2.0E 21 atoms / cm 3 , with a thickness of 80nm.

[0119] The preparation method of this MWT solar cell, this method is to realize boron doping based on boron diffusion, low pressure chemical deposition (LPCVD) prepares a layer of silicon dioxide (SiO 2 ) ultra-thin dielectric film, local ion implantation is performed on the polysilicon film on it to realize local area selective phosphorus (P) doping, and the entire metal electrode is printed on the n+ doped polysilicon, and its pattern is as follows Image 6 , forming a unique single-sided n-type MWT battery, which can not only make secondary us...

Embodiment 3

[0133] The difference from Example 1 is that in this MWT solar cell, the back contact electrode 11 is a whole-surface metal electrode except the front electrode.

[0134] Dielectric film 3 is silicon oxynitride (SiO x N 1-x ) ultra-thin dielectric film with a thickness of 0.5nm.

[0135] The doped polysilicon film is a phosphorus-doped polysilicon film, and its doping concentration is 1.0E 19 atoms / cm 3 -2.0E 21 atoms / cm 3 , with a thickness of 60nm.

[0136] The preparation method of this MWT solar cell, this method is to prepare a layer of silicon oxynitride (SiO2) based on low pressure chemical deposition (LPCVD). x N 1-x ) ultra-thin dielectric film, local ion implantation is performed on the polysilicon layer above it, and boron ion implantation is performed on the front side, and local area selective phosphorus (P) doping and boron (B) doping are realized through a one-step annealing process. In n+ Doped polysilicon prints the entire metal electrode to form a uni...

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Abstract

The invention discloses an MWT solar cell, comprising an n-type silicon substrate, wherein through holes that lead a front surface electrode to a back surface are arranged in the n-type silicon substrate. A dielectric film is arranged on the back surface of the n-type silicon substrate, a selectively doped polysilicon thin film is arranged on the dielectric film, and the selectively doped polysilicon thin film comprises a non-doped polysilicon thin film and a doped polysilicon thin film, wherein the through holes are enclosed by the non-doped polysilicon thin film, and the doped polysilicon thin film is arranged in the remaining area. According to the MWT solar cell, a back passivation structure is optimized, the selectively doped polysilicon thin film is adopted, so that superior field passivation and surface passivation can be provided by the doped polysilicon thin film, carriers can selectively tunnel through an oxide layer to reach a metal electrode, and the problem of electric leakage and short circuit can be effectively solved by the non-doped polysilicon thin film. The invention also discloses a preparation method of the above MWT solar cell which can be compatible with existing processes and is low in cost.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a MWT solar cell and a preparation method thereof. Background technique [0002] For conventional solar cells at present, the negative electrode contact electrode and the positive electrode contact electrode are respectively located on the front and back sides of the battery sheet. The front of the battery is the light-receiving surface, and the coverage of the front metal electrode main grid lines and thin grid lines will inevitably cause a part of the incident sunlight to be reflected by the metal electrodes, resulting in a part of optical loss. The coverage area of ​​the front metal electrode of an ordinary crystalline silicon solar cell is about 7%, and reducing the front coverage of the metal electrode can directly improve the energy conversion efficiency of the cell. [0003] Conventional MWT batteries make 16-25 small holes that penetrate up and down on th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0224H01L31/18
CPCH01L31/02245H01L31/0682H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 张俊兵尹海鹏蒋秀林
Owner JA SOLAR TECH YANGZHOU
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