Light-emitting diode and its preparation method
A technology of light-emitting diodes and light-emitting layers, which is used in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electric solid-state devices, etc.
Active Publication Date: 2020-05-08
BOE TECH GRP CO LTD +1
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Although perovskite has so many excellent characteristics, there are still intrinsic problems such as thermal ionization and localization at room temperature, so that it can only obtain electroluminescence at the temperature of liquid nitrogen. Therefore, at present, perovskite LEDs are still in the initial stage of development
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[0044] The following describes the embodiments of the present invention in detail, and those skilled in the art will understand that the following embodiments are intended to explain the present invention, and should not be regarded as limiting the present invention. Unless otherwise specified, in the following examples that do not explicitly describe specific techniques or conditions, those skilled in the art can carry out according to commonly used techniques or conditions in this field or according to product instructions.
[0045] In one aspect of the invention, the invention provides a light emitting diode.
[0046] According to an embodiment of the present invention, refer to figure 1 , the light-emitting diode includes an anode 100, a hole transport layer 200, a perovskite light-emitting layer 300, an electron transport layer 400, and a cathode 500 stacked in sequence, wherein the perovskite light-emitting layer 300 includes a stacked first sublayer 310 and The second ...
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Abstract
The invention provides a light-emitting diode and a preparation method thereof. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode that are stacked in sequence, wherein the perovskite light-emitting layer includes a first sublayer and a second sublayer that are stacked to form a second The material of the first sublayer includes inorganic perovskite material, and the material forming the second sublayer is organic perovskite material. In the light-emitting diode proposed by the present invention, its perovskite light-emitting layer includes an inorganic first sublayer and an organic second sublayer stacked, so that the carrier mobility of the light-emitting layer can be reduced, and the light emission in the device can be reduced. Quenching phenomenon, thereby improving the luminous brightness and luminous efficiency of the device.
Description
technical field [0001] The invention relates to the technical field of organic semiconductor devices, in particular, the invention relates to a light emitting diode and a preparation method thereof. Background technique [0002] Organic-inorganic hybrid perovskite materials have the advantages of both organic and inorganic semiconductors, such as simple preparation process, flexible devices, high carrier mobility and certain thermal stability, and calcium Titanium ore material is not only an excellent photovoltaic material, but also can be applied in the field of electroluminescence and photoluminescence due to its strong luminescence, high purity of luminescence color, and narrow light absorption layer (width at half maximum is about 20nm). Compared with traditional inorganic light-emitting diodes (LEDs), the solution method can greatly reduce the production cost of perovskite light-emitting diodes, and has higher luminous purity than organic light-emitting diodes (OLEDs), ...
Claims
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IPC IPC(8): H01L51/50H01L51/54H01L51/56H10K99/00
CPCH10K50/13H10K71/441H10K71/15H10K71/40H10K50/11H10K85/50H10K50/135H10K50/15H10K50/16H10K50/17H10K50/18H10K50/81H10K50/82H10K71/00H10K71/164H10K85/30H10K85/141H10K85/636H10K85/6572H10K2102/00H10K2102/103H10K2102/361
Inventor 徐瑞鹏王立夫王艳萍周鹏
Owner BOE TECH GRP CO LTD