A method for rapid and precise fabrication of microelectrodes by hybrid exposure
A micro-electrode and electrode layer technology, which is applied in micro-lithography exposure equipment, photolithographic process exposure devices, optics, etc., can solve problems such as high cost and tension, and achieve the effects of short time, high efficiency and high exposure accuracy
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Embodiment 1
[0040] A method for preparing microelectrodes accurately and rapidly by mixing, the steps of the method are as follows:
[0041] Step one, such as figure 1 As shown, the fabrication of silicon wafers with digital markers: design and draw marker graphics by L-edit software, the marker graphics are arranged in the plane in the form of an array, and a mask is obtained; the markers are composed as follows: "0+1", "1 +2" and so on, two numbers and a "ten", the distance between the two "ten" is 300μm. The silicon wafer is spin-coated with photoresist R1813, exposed by a UV exposure machine, and the marking pattern on the mask plate is exposed and transferred to the photoresist. After developing, the photoresist corresponding to the marked pattern will be washed away, and the part outside the marked pattern is still covered with photoresist; the silicon wafer is deposited with 5nm titanium and 20nm gold by electron beam evaporation, and then dissolved with acetone, there is glue Th...
Embodiment 2
[0048] A method for accurately and rapidly preparing microelectrodes, the steps of the method are as follows:
[0049] Step 1. Fabrication of silicon wafers with digital marks: Design and draw marks through L-edit software. The marks are composed as follows: "0+1", "1+2" and so on, two numbers and one "ten", two The spacing between "ten" is 300 μm. Make a mask plate according to the designed mark. The silicon wafer is spin-coated with photoresist R1813, exposed by a UV exposure machine, and the marking pattern on the mask plate is exposed and transferred to the photoresist. After developing, the photoresist corresponding to the mark will be washed away, and the part outside the pattern will be covered with glue. The glue-coated silicon wafer is deposited with 5nm titanium and 20nm gold by electron beam evaporation, and then stripped with acetone. The glued part will leave with the stripping, and the metal will be deposited on the corresponding position of the mark. In thi...
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