A kind of power device and its manufacturing method
A technology of power devices and manufacturing methods, which is applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of increasing device area and manufacturing cost, achieve low manufacturing cost, improve device performance and reliability, and reduce parasitic capacitance. small effect
Inactive Publication Date: 2021-02-26
自贡国晶科技有限公司
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Problems solved by technology
[0005] At present, the common method of protecting semiconductor devices is to connect transient voltage suppressors to semiconductor devices, which increases the device area and manufacturing cost
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[0048] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.
[0049] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0050] If the purpose is to describe the situation directly on another layer or another a...
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The present invention provides a power device and its manufacturing method, comprising: a substrate of the first conductivity type; an epitaxial layer of the first conductivity type formed on the upper surface of the substrate; an epitaxial trench formed on the epitaxial layer ; the isolation layer formed on the sidewall of the epitaxial trench; the first epitaxial region of the second conductivity type, the second epitaxial region of the first conductivity type and the third epitaxial region of the first conductivity type formed in the epitaxial trench The epitaxial region, the ion concentration of the third epitaxial region is lower than that of the second epitaxial region; the source region formed on the upper surface of the epitaxial layer; the gate silicon oxide layer and the high resistance polysilicon layer; the dielectric layer; the first metal layer and a second metal layer, the first metal layer penetrates the dielectric layer and connects with the source region to form a source, and the second metal layer penetrates the dielectric layer and connects with the high-resistance polysilicon layer to form a gate ; A third metal layer, the third metal layer is connected to the substrate 1 to form a drain. The invention improves device performance and reduces device cost.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device and a manufacturing method thereof. Background technique [0002] Transient voltage suppressor is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, fast response, small leakage current and high reliability. Advantages, so it has been widely used in voltage transient and surge protection. Transient voltage suppressor is suitable for the protection device of high-frequency circuit, because it can reduce the interference of parasitic capacitance to the circuit, and reduce the attenuation of high-frequency circuit signal. [0003] Electrostatic discharge, as well as other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor devices are increasingly miniaturized, high-d...
Claims
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IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0266
Inventor 李俊
Owner 自贡国晶科技有限公司