Ribbon trimming machine for encapsulating semiconductor elements and method of use thereof
A molding machine and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, pressure inorganic powder coating, etc., can solve the problems of cutter wear, affecting work efficiency, short service life, etc., and achieve easy replacement and installation, Reduce labor intensity and ensure the effect of service life
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Embodiment 1
[0059] The following is attached Figure 1-8 The present invention is described in further detail.
[0060] A cutting rib forming machine for encapsulating semiconductor components, such as Figure 1-8 As shown, it includes a support platform 1 with an inner cavity, the upper part of the support platform 1 is fixedly installed with a guide device 2, a feeding device 8 and a tendon cutting device 3, and the bottom of the support platform 1 is symmetrically installed with four legs 6 ;
[0061] The guide device 2 includes a Z-shaped guide rail 27 fixedly installed on the top of the support platform 1, and a guide channel 28 is provided in the center on the top wall of the Z-shaped guide rail 27;
[0062] The feeding device 8 includes a support block 13 that is slidably installed inside the guide channel 28. Two cylindrical bosses 14 are symmetrically installed on the top of the support block 13, and one end surface of the support block 13 is connected to the first electric cyl...
Embodiment 2
[0081] The difference from Example 1 is that the surface of the cutter 34 is also provided with a wear-resistant layer, and the wear-resistant layer is prepared by the following method:
[0082] Take the following raw materials and weigh them by weight: 40 parts of epoxy resin, 15 parts of titanium dioxide powder, 15 parts of talc powder, 30 parts of aluminum oxide powder, 18 parts of silicon carbide particles, 8 parts of cobalt naphthenate, silane coupling agent 2 parts and 40 parts of water;
[0083] S1. Add epoxy resin, titanium dioxide powder, talc powder, aluminum oxide powder and silicon carbide particles into a ball mill for fine grinding until the diameter of the particles is not greater than 40um to obtain a mixed powder material;
[0084] S2. Add the mixed powder material and water prepared in step S1 into the reaction kettle and stir for 20 minutes, then add cobalt naphthenate and silane coupling agent, and continue stirring for 20 minutes. The stirring speed is set...
Embodiment 3
[0089] The difference from Example 2 is the preparation of the wear-resistant layer, and its specific preparation method is as follows:
[0090] Take the following raw materials and weigh them by weight: 45 parts of epoxy resin, 17 parts of titanium dioxide powder, 18 parts of talc powder, 40 parts of aluminum oxide powder, 21 parts of silicon carbide particles, 10 parts of cobalt naphthenate, silane coupling agent 4 parts and 50 parts of water;
[0091] S1. Add epoxy resin, titanium dioxide powder, talc powder, aluminum oxide powder and silicon carbide particles into a ball mill for fine grinding until the diameter of the particles is not greater than 40um to obtain a mixed powder material;
[0092] S2. Add the mixed powder material and water prepared in step S1 into the reaction kettle and stir for 25 minutes, then add cobalt naphthenate and silane coupling agent, and continue stirring for 25 minutes. The stirring speed is set to 800r / min, and the temperature is set to 90°C ...
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