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A method for preparing electrodes covering all sides

A side electrode and all technology, applied in the field of optoelectronics, can solve the problems of stable performance and reliability, the preparation method of side electrodes, and inadaptability, so as to achieve good electrode adhesion, reduce device loss, and increase electrode area.

Active Publication Date: 2021-07-23
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of the side electrodes is suitable for patch concave electrode network resistance, and is not suitable for the preparation of side electrodes of micro-nano electronic devices, so there is still no side electrode preparation method with stable performance and high reliability.

Method used

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  • A method for preparing electrodes covering all sides
  • A method for preparing electrodes covering all sides
  • A method for preparing electrodes covering all sides

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] A method for preparing all side electrodes, comprising the steps of:

[0047] A. Cleaning and drying: The semiconductor raw material is cleaned in acetone solution with 20KHz ultrasonic wave for 5 minutes, then in isopropanol solution with 20KHz ultrasonic wave for 5 minutes, and then in deionized water with 20KHz ultrasonic wave for 10 minutes, repeating this 3 times; finally, Blow dry with high-purity nitrogen;

[0048] B. Depositing a passivation layer: using the PECVD method, depositing silicon oxide on the surface of the semiconductor raw material treated in step A to obtain a passivation layer with a thickness of 200nm;

[0049] C. Photolithography: use photolithography technology to perform photolithography treatment on the passivation layer, photoetch the mesa etching area, and obtain a photoresist structure with an inclination angle of 40°;

[0050] D. Mesa etching: use etching technology to etch a step with a steepness of 40° on the semiconductor raw mate...

Embodiment 2

[0055] A method for preparing all side electrodes, comprising the steps of:

[0056] A. Cleaning and drying: Clean the semiconductor raw materials in MOS grade acetone solution with 90KHz ultrasonic wave for 5 minutes, then use 90KHz ultrasonic wave in MOS grade isopropanol solution for 5 minutes, and then use 90KHz ultrasonic wave in deionized water for 10 minutes, repeat 3 times times; finally, use high-purity nitrogen to dry;

[0057] B. Depositing a passivation layer: using a thin film deposition method, depositing silicon nitride on the surface of the semiconductor raw material treated in step A to obtain a passivation layer with a thickness of 5000nm;

[0058] C. Photolithography: using photolithography technology, photolithography treatment is carried out on the passivation layer, and the mesa etching area is photoetched to obtain a photoresist structure with an inclination angle of 80°;

[0059] D. Mesa etching: use etching technology to etch a step with a mesa st...

Embodiment 3

[0064] A method for preparing all side electrodes, comprising the steps of:

[0065] A. Cleaning and drying: The semiconductor raw material is cleaned in MOS grade acetone solution with 50KHz ultrasonic wave for 5 minutes, then in MOS grade isopropanol solution with 60KHz ultrasonic wave for 5 minutes, and then in deionized water with 40KHz ultrasonic wave for 10 minutes, repeating this for 3 minutes. times; finally, use high-purity nitrogen to dry;

[0066] B. Depositing a passivation layer: using a thin film deposition method to deposit silicon oxide on the surface of the semiconductor raw material treated in step A to obtain a passivation layer with a thickness of 500nm;

[0067] C. Photolithography: use photolithography technology to perform photolithography treatment on the passivation layer, photolithographically etch the mesa etching area, and obtain a photoresist structure with a 50° tilt angle;

[0068] D. Mesa etching: use etching technology to etch a step with ...

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Abstract

The invention discloses a method for preparing electrodes covering all side surfaces, and belongs to the technical field of optoelectronics. The steps include: A. Clean and dry; B. Depositing a passivation layer; C. Photolithography etching area; D. Mesa etching; E. deposit metal; F. Corrosion passivation layer; G. annealing. The micro-nano electronic device with all side electrodes covered by the preparation method can reduce the nonlinear junction capacitance and contact resistance generated by electrode contact, reduce the device loss caused by electrode contact, and improve device performance and stability; at the same time, The preparation method is simple and the electrode reliability is high.

Description

technical field [0001] The invention relates to a method for preparing all-covering side electrodes, in particular to a method for preparing all-covering side electrodes on micro-nano electronic devices, and belongs to the field of optoelectronic technology. Background technique [0002] Micro-nano electronic devices refer to electronic devices with micro-nano scale and specific functions designed and prepared using micro-nano-level processing and preparation technologies, such as lithography, epitaxy, micro-fabrication, self-assembly growth, and molecular synthesis technologies. . Among them, nanotechnology is a high-tech discipline that studies and applies the laws of motion and characteristics of electrons, atoms, and molecules in the 0.1-100um scale space. Its goal is to use single atoms and molecules to manufacture product. The scientific and technological circles at home and abroad have generally believed that nanotechnology has become the most dynamic research field...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/00015B81C1/00404
Inventor 王文杰谢武泽李舒啸安宁李倩曾建平
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS