Ga2O3-based transparent conducting thin film and preparation method thereof

A transparent conductive film, ta2o5 technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as limited improvement

Active Publication Date: 2018-12-25
SOUTH CHINA NORMAL UNIVERSITY
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  • Description
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Problems solved by technology

The current peer research results have shown that Si doping replaces Ga potential to improve Ga 2 o 3 The conductivity of the material, but the improvement is limited, and most of the

Method used

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  • Ga2O3-based transparent conducting thin film and preparation method thereof

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Embodiment 1

[0047] 1) Using high temperature atmosphere sintering method to obtain high density Si and Ta doped Ga 2 o 3 Mixed target, the specific process includes: a) choose nano-Ga with a purity higher than 99.99% and a particle size of 40nm 2 o 3 powder, nano-SiO 2 Powder and Nano Ta 2 o 5 powder, mix and grind for 1 hour according to the weight ratio of 98.9:1:0.1, then add 1 wt% PVA for grinding and granulation, then put the granulated powder into the hydraulic press mold and keep the pressure under 40MPa pressure for 5 minutes to obtain the initial Blank. b) After the green body is degreased in a 600°C incubator, it is subjected to 350MPa cold isostatic pressing secondary molding treatment, and the pressure is maintained for 1.5 minutes to obtain a green body. c) Carry out high-temperature sintering to the biscuit in an oxygen environment (pressure 0.02MPa), the sintering temperature is 1400°C, and the holding time is 9 hours. Finally, Si and Ta doped Ga with a density of 88...

Embodiment 2

[0051] The substrate used in this example is a (0001) plane sapphire substrate instead of the homogeneous Ga 2 o 3 substrate, so this embodiment is heterogeneous substrate deposition Ga 2 o 3 film. The specific implementation process is as follows:

[0052] 1) Obtain Si and Ta doped Ga with high density (better than 85%) according to the method of Example 1 2 o 3 mixed target.

[0053] 2) First, a layer of Ga is deposited on the (0001) plane sapphire substrate at low temperature by laser pulse deposition process. 2 o 3 Nucleation layer material, and then deposit a layer of Ga at high temperature 2 o 3 base transparent conductive film. Specific steps are as follows:

[0054] A) Clean the surface of the sapphire substrate first, remove the surface grease, rinse with deionized water and blow dry with nitrogen, and put it into the heated substrate holder of the laser pulse deposition chamber;

[0055] B) A commercially available nucleation layer material target (pure G...

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Abstract

The invention relates to a Ga2O3-based transparent conducting thin film and a preparation method thereof. The transparent conducting thin film is an n-type thin film with high concentration obtained by mixing Si and Ta elements into a Ga2O3 thin film. A thin film deposition method is adopted in the Ga2O3-based transparent conducting thin film is laser pulse deposition method, and the Ga2O3-based transparent conducting thin film is deposited on the substrate surface after a laser beam bombards Ca2O3-based adulteration mixed target. The obtained Ga2O3-based transparent conducting thin film has higher carrier concentration (>4 *10<19> cm<-3>) and good electrical conductivity, has high light-admitting quality (>82%) in deep ultra violet to a visible region, is suitable for as a window layer and an electrode layer material of ultra violet luminescent devices (such as LED, LD), solar-blind detector and other devices, and has a good application prospect.

Description

technical field [0001] The invention belongs to the field of thin film material preparation, in particular to a Ga 2 o 3 Base transparent conductive film and preparation method thereof. Background technique [0002] Transparent conductive oxide (TCO) materials have dual properties of transparency and conductivity, and play an important role in optoelectronic devices. They can be used as transparent window materials or electrode films in devices such as light-emitting diodes, lasers, solar cells, and detectors. In recent years, with the advancement of science and technology and the rapid development of the microelectronics industry, the development of optoelectronic devices is expanding from the infrared and visible light bands to the deep ultraviolet band. We know that deep ultraviolet optoelectronic devices have important civilian and military values ​​in the fields of sterilization, disinfection, curing and solar blind detection, but deep ultraviolet optoelectronic devic...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/08C23C14/58
CPCC23C14/08C23C14/28C23C14/5806C23C14/5853
Inventor 郑树文郑涛尚秋月李述体
Owner SOUTH CHINA NORMAL UNIVERSITY
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