Vertical magnetization mtj device and stt-mram

A vertical magnetization and device technology, applied in semiconductor devices, electric solid state devices, magnetic field controlled resistors, etc., can solve the problem of high critical write current
CN109087995BActive Publication Date: 2021-04-13CETHIK GRP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CETHIK GRP
Publication Date
2021-04-13

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Abstract

The present application provides a vertical magnetization MTJ device and STT-MRAM. The vertical magnetization MTJ device includes a reference layer, an insulating barrier layer, a free layer, an enhancement layer, a demagnetic coupling layer, and a pinned layer stacked in sequence, wherein the magnetization direction of the reference layer is opposite to that of the pinned layer, and the enhancement layer is used to enhance The perpendicular magnetic anisotropy of the free layer, the decoupling layer is used to isolate the free layer from the pinned layer. The critical write current is reduced, the energy consumption of the STT-MRAM chip is reduced, and the data write rate is also increased. Moreover, the fixed layer can offset the stray magnetic field that the reference layer acts on the free layer, and avoid the gap between different bits. In addition, the enhancement layer in the vertical magnetization MTJ device can enhance the magnetic anisotropy of the free layer, thereby improving the thermal stability of the free layer.
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Description

technical field

[0001] The present application relates to the technical field of computer storage, in particular to a vertical magnetization MTJ device and STT-MRAM. Background technique

[0002] Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM for short) is a new type of non-volatile memory whose core storage unit is an MTJ device. MTJ is mainly composed of reference layer, insulating barrier layer and free layer. The reference layer is also called the pinned layer, its magnetization direction remains unchanged, only the magnetization direction of the free layer is changed to make it the same direction or opposite to the reference layer.

[0003] MTJ devices rely on quantum tunneling to allow electrons to pass through insulating barrier layers. The tunneling probability of polarized electrons is related to the relative magnetization directions of the reference layer and the free layer. When the magnetization direction of the free layer is the same as that of ...

Claims

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