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A two-dimensional conductive metal organic framework material and its preparation method

A technology of conductive metal and organic framework, applied in the field of conductive materials, to achieve the effect of facilitating the transmission of charges, having versatility, and improving the conductivity

Active Publication Date: 2021-08-13
GUANGDONG UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a two-dimensional conductive metal organic framework material and its preparation method, which solves the technical problems of the stability and category of conductive MOF materials in the prior art

Method used

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  • A two-dimensional conductive metal organic framework material and its preparation method
  • A two-dimensional conductive metal organic framework material and its preparation method
  • A two-dimensional conductive metal organic framework material and its preparation method

Examples

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Embodiment 1

[0038] 2,5-Difluoro-3,6-dimercaptoterephthalic acid (5.3 mg, 20.0 μmol) and europium trichloride hexahydrate (16.0 mg, 44.0 μmol) were placed in an 8 mm outer diameter, 6 mm inner diameter A thick-walled glass tube, and a mixed solution of N,N-dimethylformamide, water and acetonitrile (1:1:1 by volume) was added to the glass tube, the glass tube was sealed with an oxygen-hydrogen flame, and then placed in Sonicate in an ultrasonic instrument for 30 minutes, and finally place it in a programmable temperature-controlled electric blast drying oven, keep it at 140°C for 5 days, and cool it down to room temperature at a rate of 1° / min to obtain black blocky crystals, which are two Dimensional conductive metal-organic framework materials with a yield of 50.3%.

[0039] In summary, the two-dimensional conductive metal organic framework material prepared in Example 1 was measured by Agilent Technologies SuperNova Single Crystal Diffractometer, and crystal X-ray diffraction data were o...

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Abstract

The invention relates to the field of conductive materials, in particular to a two-dimensional conductive metal organic framework material and a preparation method thereof. The invention discloses a two-dimensional conductive metal organic framework material whose chemical formula is C 16 ReF 4 o 8 S 4 ; Each Re ion coordinates with oxygen ions and sulfur ions at the same time, and forms a two-dimensional conductive metal-organic framework material with a two-dimensional layered structure; wherein, Re is a positive trivalent rare earth metal element. The present invention also provides a preparation method of a two-dimensional conductive metal organic framework material, adding 2,5-difluoro-3,6-dimercaptoterephthalic acid and Re salt to N,N-dimethylformamide , water and acetonitrile in a mixed solution to obtain a two-dimensional conductive metal organic framework material. The invention provides a two-dimensional conductive metal organic framework material and a preparation method thereof, which expands the category of conductive MOF materials and solves the technical problem of poor stability of conductive MOF materials in the prior art.

Description

technical field [0001] The invention relates to the field of conductive materials, in particular to a two-dimensional conductive metal organic framework material and a preparation method thereof. Background technique [0002] In recent years, conductive metal-organic framework (Metal-Organic Framework, MOF) materials have developed rapidly, and they have great application prospects in the field of electronics. Among them, the semiconductor properties of MOF materials make them play a vital role in the field of semiconductor devices. With the rapid development of the semiconductor industry and integrated circuits towards nanoscale miniaturization and miniaturization, traditional semiconductor materials such as silicon, germanium and gallium arsenide have gradually reached functional bottlenecks, so it is necessary to develop some novel semiconductor materials to Replace traditional semiconductor materials. Due to the unique structural, chemical and functional diversity of M...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G83/00
CPCC08G83/008
Inventor 王雷何军陈思远黄一涛张华堂
Owner GUANGDONG UNIV OF TECH