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A light generating device for super-resolution lithography

A super-resolution and lithography technology, applied in the field of super-resolution lithography, can solve the problems of large transmission loss and small aspect ratio of graphics

Active Publication Date: 2020-07-07
CHONGQING UNIV
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  • Abstract
  • Description
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Problems solved by technology

[0005] Aiming at the problems of large transmission loss and small pattern aspect ratio in surface plasmon lithography, the technical problem to be solved by the present invention is to provide a light generation device for super-resolution lithography, which can realize high-efficiency transmission of high-frequency evanescent waves And form a super-resolution lithographic pattern with a large aspect ratio

Method used

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  • A light generating device for super-resolution lithography
  • A light generating device for super-resolution lithography
  • A light generating device for super-resolution lithography

Examples

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Embodiment

[0029] This example figure 1 Shown: with S Polarized light, the incident light wavelength is 193nm, and the incident angle is 0°; the transparent base layer 1 is glass; the mask layer 2 is a one-dimensional slit array with a period of 120nm Al Mask, thickness 80nm; planarization film layer 3 material is PMMA, thickness 20nm; the total number of film layers of photonic crystal multilayer film is 9 layers, the first film layer 41 is 5 layers TiO 2 The dielectric film layer has a dielectric constant of 2.8, a thickness of 17.2nm, and a second film layer 42 of 4 layers MgFThe dielectric film layer has a dielectric constant of 1.43 and a thickness of 33.7nm; the material of the photosensitive layer 5 is photoresist with a dielectric constant of 1.71+0.055 i , thickness 100nm; substrate layer 6 is glass.

[0030] when S When the polarized plane light irradiates the mask layer slit grating vertically, diffracted waves of different orders will be excited. If the 1st order diff...

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Abstract

A light generating device for super-resolution photoetching is disclosed, the device is provided with a transparent base layer (1), a grating mask layer of a nano-slit or hole array structure (2), a planarized film layer (3) and a photonic crystal multilayer film (4) in sequence from top to bottom. The technical effects of the invention are that evanescent waves with high spatial frequency are transmitted to a photosensitive layer to form a deep sub-wavelength photoetching pattern with high aspect ratio and high light field intensity characteristics, which breaks through the diffraction limitconstraint, has high light transmission efficiency and good pattern uniformity.

Description

technical field [0001] The invention belongs to the technical field of super-resolution lithography, and in particular relates to a light-generating device for super-resolution lithography, which uses a one-dimensional photonic crystal composed of a dielectric film to realize the effective transmission of high-frequency evanescent waves and forms a deep sub-wavelength in the photosensitive layer. graphics. Background technique [0002] Photolithography is the most commonly used patterning technique in the semiconductor industry. Restricted by the diffraction limit of light, the resolution of traditional lithography can only reach the half-wavelength level. The essential reason is that the evanescent wave fails to reach the imaging surface together with the propagating wave. Therefore, high-frequency information containing the fine structure of the object fails to participate in the imaging. In order to break through the diffraction limit and obtain small-scale patterns, s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/7015G03F7/70158G03F7/70191
Inventor 梁高峰陈刚温中泉
Owner CHONGQING UNIV
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