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Multilayer wiring film and thin film transistor element

A thin film transistor and wiring technology, applied in electrical components, electrical solid devices, semiconductor devices, etc., can solve problems such as poor adhesion, and achieve the effect of low resistance

Inactive Publication Date: 2019-01-04
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, Cu wiring has poor adhesion to glass substrates, semiconductor films such as Si (silicon) films, metal oxide films, etc.

Method used

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  • Multilayer wiring film and thin film transistor element
  • Multilayer wiring film and thin film transistor element

Examples

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Effect test

Embodiment

[0106] Hereinafter, the present invention will be described in more detail by citing examples and comparative examples, but the present invention is not limited to these examples, and can also be implemented in a range suitable for its gist, and these are all included in the technology of the present invention. within range.

[0107]

[0108] (1) Fabrication of laminated wiring film

[0109] An alkali-free glass plate with a diameter of 4 inches and a plate thickness of 0.7 mm was prepared as a transparent substrate, cleaned with a neutral detergent, and irradiated with an excimer ultraviolet (Ultraviolet, UV) lamp for 30 minutes to remove surface contamination. On the surface-treated non-alkali glass plate, a laminated wiring film including a wiring layer shown in Table 1 and a cap layer which is a Cu—X alloy layer was formed by DC magnetron sputtering. In addition, the wiring film of sample No. 1 is a single-layer film of only a wiring layer.

[0110] When forming a film...

Embodiment 2

[0142] The laminated wiring film when using the adhesion layer containing Ti was produced by the following procedure. Specifically, as in the case of Example 1, on an alkali-free glass plate as a transparent substrate, a film having an adhesive layer, a wiring layer, and a Cu layer shown in Table 2 was sequentially formed by DC magnetron sputtering. - Laminated wiring film of capping layer of X alloy layer. In addition, the wiring film of sample No. 40 is a laminated film having only an adhesive layer and a wiring layer. The film-forming conditions of the adhesive layer, the wiring layer, and the cover layer were the same as those in Example 1.

[0143] With regard to the laminated wiring film obtained as described above, the measurement of the specific resistance and the evaluation of oxidation resistance were performed under the same conditions as in the case of Example 1. In addition, based on the above results, those with a resistivity of 3 μΩcm or less after heat treatm...

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Abstract

The present invention relates to a multilayer wiring film which is provided with a wiring layer that is formed of Cu or a Cu alloy and has an electrical resistance of 10 [mu]ohm cm or less and a Cu-Xalloy layer that contains Cu and an element X and is arranged above and / or below the wiring layer, and wherein the element X is composed of at least one element selected from the group X consisting ofAl, Mn, Zn and Ni, and the metals constituting the Cu-X alloy layer have a specific composition. A multilayer wiring film according to the present invention is able to provide a multilayer wiring film which has low electrical resistance and is free from film separation during the formation of an SiOx film by a CVD method, said SiO film serving as an interlayer insulating film, and which is also free from an increase in the electrical resistance even if subjected to a high-temperature heat treatment that is carried out at 400 DEG C or higher.

Description

technical field [0001] The invention relates to a laminated wiring film and a thin film transistor element. Background technique [0002] Oxide semiconductors are known as semiconductor materials for thin film transistors (hereinafter also referred to as TFT: Thin Film Transistor) used in flat panel displays such as liquid crystal panels and organic electroluminescence (EL) panels, or touch screens. Or a low-temperature polysilicon semiconductor (hereinafter also referred to as LTPS: Low Temperature Poly-Silicon). [0003] Oxide semiconductors or LTPS semiconductors have higher electron mobility than conventionally used amorphous silicon semiconductor materials, and can speed up TFT devices. [0004] On the other hand, studies are underway to increase the driving speed of TFT elements by reducing the resistance of wiring materials. Al (aluminum) thin films or indium tin oxide (Indium Tin Oxide, ITO) thin films have been used in the electrode wiring of existing flat panel d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285C22C9/01C22C9/04C22C9/05C23C14/14C23C14/34H01L21/28H01L29/417H01L29/423H01L29/49
CPCC22C9/01C22C9/04C22C9/05C22C9/06H01L27/1244H01L29/458H01L29/45H01L29/4908H01L29/7869H01L29/78678C03C17/36C03C17/3649C03C17/3655C03C17/3671C03C17/40C03C2218/156C03C2218/32C03C23/0075H01L23/53238H01L23/53233C23C16/401C23C16/50C23C14/35C23C14/165C23C14/14C23C14/34H01L21/285H01L29/417H01L29/423H01L29/49H01L21/28C03C17/09C03C2217/253C03C2218/31C23C16/0281C23C16/34H01L27/1225
Inventor 志田阳子后藤裕史
Owner KOBE STEEL LTD
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