Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for manufacture a double buffer lay perovskite solar cell

A technology of solar cells and manufacturing methods, which can be applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., and can solve problems such as backward conversion efficiency

Inactive Publication Date: 2019-01-08
北京恒信卓元科技有限公司
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although significant progress has been made in current perovskite synthesis, most of the studies have used small areas (2 ) perovskite, there are only a few studies trying to prepare large-area PSCs, and the conversion efficiency in large-area cases is far behind the laboratory's 22%

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for manufacture a double buffer lay perovskite solar cell
  • A method for manufacture a double buffer lay perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The FTO transparent conductive glass was ultrasonically cleaned with acetone, ethanol, and deionized water in sequence, and then treated with ultraviolet and ozone to obtain a clean 100 nm transparent conductive glass as the bottom electrode 101 . Use the sol-gel method to spin-coat on the FTO transparent conductive glass substrate to form nano-titanium dioxide particles 102 with a thickness of 20nm, then dry at room temperature to remove excess solvent, and then form a layer of 30nm molybdenum dioxide on it by hydrothermal method layer 103, and slowly raise the temperature to 60°C for drying treatment to form nano-TiO 2 / MoO 2 The buffer layer.

[0029] A layer of TiO electron transport layer 104 with a thickness of 80 nm was formed on the buffer layer, and then a perovskite thin film was spin-coated on the electron transport layer, and the film was placed in a vacuum chamber for 3 seconds to promote perovskite by removing residual solvent. Ore nucleation, spin coati...

Embodiment 2

[0033] The ITO transparent conductive glass was ultrasonically cleaned with acetone, ethanol, and deionized water in sequence, and then treated with ultraviolet and ozone to obtain a clean 100 nm transparent conductive glass as the bottom electrode 101 . Use the sol-gel method to spin-coat on the ITO transparent conductive glass substrate to form nano-titanium dioxide particles 102 with a thickness of 20nm, then dry at room temperature to remove excess solvent, and then form a layer of 30nm molybdenum dioxide on it by hydrothermal method layer 103, and slowly raise the temperature to 60°C for drying treatment to form nano-TiO 2 / MoO 2 The buffer layer.

[0034] A 20nm ZnO electron transport layer 104 is formed on the buffer layer, followed by spin-coating a perovskite thin film on the electron transport layer, and placing the film in a vacuum chamber for 3 seconds to promote the formation of perovskite by removing residual solvent. The core is spin-coated in ambient air; spi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a double buffer layer perovskite solar cell. The method mainly comprises sequentially forming a bottom electrode, a lower nano double buffer layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, an upper nano double buffer layer, a top electrode and an anti-reflection coating. As that nano TiO2 / MoO2 buff layer structure is for between the electron transport layer and the hole transport layer, the main structure of the perovskite solar cell of the electron transport layer, the perovskite absorption layer and the hole transport lay can be better protected, thereby realizing the manufacture of the perovskite solar cell with a large area.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, in particular to a method for manufacturing a double-buffer layer perovskite solar cell. Background technique [0002] With the continuous consumption of non-renewable energy such as fossil fuels, the energy crisis faced by mankind is becoming more and more serious. Therefore, the renewable energy solar energy has been paid more and more attention by people. As an inexhaustible clean and renewable energy source, solar energy has attracted widespread attention. The traditional method of using solar energy is the commonly used solar water heater (light is converted into heat), but the scope of application of this energy-generating method is very limited. With Swiss scientist Micheal It is said that the energy that the sun irradiates on the earth's surface every year is about 32×10 24 J, which is equivalent to 10,000 times of the current annual global energy consumption, if the energy of 0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/152H10K30/151H10K30/15Y02E10/549Y02P70/50
Inventor 王伟红
Owner 北京恒信卓元科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com