Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

a fast growing sno 2 nanosheet approach

A nanosheet, fast technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of long nanosheet time, poor size uniformity of nanosheets, etc., and achieve low preparation cost and uniformity Good performance and stable performance

Active Publication Date: 2021-02-26
WUYI UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method prepares SnO 2 The time of nanosheets is very long, and the size uniformity of nanosheets is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a fast growing sno <sub>2</sub> nanosheet approach
  • a fast growing sno <sub>2</sub> nanosheet approach
  • a fast growing sno <sub>2</sub> nanosheet approach

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A fast growing SnO 2 A method for nanosheets, comprising the steps of:

[0028] S1), preparation of growth solution

[0029] S101), 0.118g of stannous chloride and 0.0678g of sodium acetate were added to 15mL of deionized water and magnetically stirred for 15min to obtain A solution;

[0030] S102), 0.072g of hexamethylenetetramine was added to 15mL of deionized water, and magnetically stirred for 15min to obtain B solution;

[0031] S103), mix the above-mentioned A solution and B solution evenly, and add 20mL of ethylene glycol, and then magnetically stir for 15min to prepare a uniform growth solution;

[0032] S2), substrate cleaning: use ethanol and deionized water to ultrasonically clean the ITO substrate for 5 times, and dry it;

[0033] S3), SnO 2 For the growth of nanosheets, put the prepared growth solution and clean ITO substrate into the autoclave, and keep it at 160°C for 1h;

[0034] S4), sample cleaning, using deionized water to ultrasonically clean th...

Embodiment 2

[0036] A fast growing SnO 2 A method for nanosheets, comprising the steps of:

[0037] S1), preparation of growth solution

[0038] S101), 0.15g of stannous chloride and 0.07g of sodium acetate were added to 15mL of deionized water and magnetically stirred for 15min to obtain A solution;

[0039] S102), 0.08g of hexamethylenetetramine was added to 15mL of deionized water, and magnetically stirred for 15min to obtain B solution;

[0040] S103), mix the above-mentioned A solution and B solution evenly, and add 20mL of ethylene glycol, and then magnetically stir for 15min to prepare a uniform growth solution;

[0041] S2), substrate cleaning: use ethanol and deionized water to ultrasonically clean the ITO substrate 8 times, and dry it;

[0042] S3), SnO 2 For the growth of nanosheets, put the prepared growth solution and clean ITO substrate into the autoclave, and keep it at 250°C for 0.5h;

[0043] S4), sample cleaning, using deionized water to ultrasonically clean the samp...

Embodiment 3

[0045] Such as figure 1 As shown, SnO 2 The nanosheets completely cover the substrate, and the distribution is relatively uniform, figure 2 It is the SnO of the embodiment of the present invention 1 The high power scanning electron microscope (SEM) photo of the nano sheet of preparation, as figure 2 As shown, SnO 2 The nanosheet has good uniformity, and its thickness is about 10nm. image 3 It is the SnO prepared by Example 1 of the present invention 2 The absorption spectrum of photocatalytic degradation of methylene blue by nanosheets, as shown in the figure, after 1.5h of photocatalytic degradation, the absorbance of methylene blue decreased from 3.06 to 0.25, which shows that SnO 2 Nanosheets have good photocatalytic degradation function.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a fast growing SnO 2 The method for nanosheet, comprising the following steps: S1), the preparation of growth solution, S2), SnO 2 For the growth of nanosheets, put the prepared growth solution and clean ITO substrate into the autoclave, and keep it warm at 160-250°C for 0.5-4h; S3), sample cleaning, use deionized water to ultrasonically clean the sample 3-5 times to remove residual reagents; the present invention has a short growth period and good uniformity of nanosheets, which can improve the SnO 2 The sensitivity of nanomaterials; the preparation process is simple, the preparation cost is low, and the performance is stable, and the prepared SnO 2 Nanosheets have better photocatalytic degradation function; the invention prepares SnO 2 The distribution of nanosheets is relatively regular, which is beneficial to increase the specific surface area of ​​nanomaterials; the present invention prepares SnO 2 Nanosheets have good application prospects in lithium-ion batteries, sensors, photocatalysis and other fields.

Description

technical field [0001] The invention relates to the technical field of gas sensitive materials, in particular to a fast-growing SnO 2 nanosheet method. Background technique [0002] With the rapid development of gas sensors, gas sensitive materials have also been developed rapidly. At present, gas sensors are mainly based on semiconductor metal oxides such as ZnO, SnO 2 、WO 3 , these metal oxides are widely studied gas-sensing materials because of their excellent performance, environmental friendliness, abundant resources, and low price. The gas-sensing performance of the material can be improved by metal oxide surface modification, metal / noble metal doping and other processes, and it has a very wide range of applications in the field of gas sensors. [0003] The key factors that determine the sensitivity of semiconductor gas-sensing materials include: specific surface area, by chemically constructing nanomaterials, making the material have a larger specific surface area ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G19/02C01P2004/03C01P2004/61C01P2004/62
Inventor 杨为家刘铭全刘俊杰何鑫张弛
Owner WUYI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com