Non-contact sub-nano sensing method and non-contact sub-nano sensing device based on three-dimensional quantum tunneling
A quantum tunneling and sensing device technology, applied in measurement devices, electromagnetic measurement devices, transmission of sensing components using wave/particle radiation devices, etc. Head mechanical structure, signal transmission shielding interference, etc., to achieve the effect of improving the maximum measurable aspect ratio, avoiding friction, and ensuring dynamic characteristics
Active Publication Date: 2019-01-11
HARBIN INST OF TECH
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The technical characteristics of the sensing technology scheme are: (1) The scheme uses the Schottky radiation effect as the sensing principle, which is a non-contact sensing principle, and can theoretically achieve rapid measurement without damage; (2) The research literature is A preliminary exploration of the principle, the probe is composed of solid metal rods and metal balls directly welded, no complete and specific technical solutions have been given for the measurement of structures with large aspect ratios, and no mechanical structure and signal transmission of the probe have been given Technical solutions such as shielding and shielding interference, etc., cannot realize the actual engineering measurement of structures with large aspect ratios
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[0036] figure 2 As another embodiment of the present invention, the measurement drive mechanism 5 drives the object under test 15 . Fix the test piece 15 on the measurement drive mechanism 5, and the test drive mechanism 5 drives the test piece 15 close to the micro-probe 6 of the tunneling probe 1 to complete the measurement. The tunneling probe 1 is connected and fixed with the probe attitude adjustment mechanism 3 and the anti-collision safety protection mechanism 4, and can be installed on the Z-axis motion mechanism of the coordinate machine for easy measurement.
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A non-contact sub-nano sensing method and a non-contact sub-nano sensing device based on three-dimensional quantum tunneling belong to precision sensing and measuring technology. The method provided by the invention comprises the following steps: using a three-dimensional quantum tunneling principle for sensing for the conductor under measurement, firstly adjusting an aiming gap of the object under measurement and a micro-measuring ball to a tunneling working interval, generating bias voltage loading by using a bias electric field generating system to form a bias electric field between the micro-measuring ball and the device under measurement, then converting the aiming gap into a sensing signal through the quantum tunneling effect, and extracting the information of the aiming gap by sub-nano resolution through a tunneling signal detection system. The invention also provides a sensing device. The non-contact sub-nano sensing method and the non-contact sub-nano sensing device based on three-dimensional quantum tunneling effectively take into account the characteristics of sub-nano resolution, three-dimensional isotropic and non-contact sensing, which can realize high resolution measurement of large aspect ratio micro / nano / micro structure.
Description
technical field [0001] The invention belongs to the technical field of precision sensing and measurement, and mainly relates to a non-contact sub-nanometer sensing method and device based on three-dimensional quantum tunneling. Background technique [0002] With the increasing level of precision machining and manufacturing, micro-nano / micro structures with large aspect ratio features are applied in cutting-edge technology fields, and sensing methods and sensing probes for precision measurement of such structures have become current Research hotspots. High resolution and aiming accuracy, three-dimensional isotropy and non-destructive rapid measurement capabilities are the key elements to realize high-precision measurement of large aspect ratio structures. However, it is difficult to achieve sub-nanometer high resolution, three-dimensional isotropy, large aspect ratio measurement capability and wireless Effective consideration of damage measurement characteristics and high-p...
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IPC IPC(8): G01B7/004G01B7/26G01B7/28G01B7/00G01B15/00G01B15/04G01D5/54G01D5/62
CPCG01B7/00G01B7/004G01B7/26G01B7/28G01B15/00G01B15/04G01D5/54G01D5/62
Inventor 边星元崔俊宁陆叶盛谭久彬
Owner HARBIN INST OF TECH
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