High temperature-resistant doped fiber temperature sensor
A technology of temperature sensor and doped optical fiber, which is applied in thermometers, thermometers with physical/chemical changes, instruments, etc., can solve the problems of complex semiconductor diaphragm manufacturing process, high requirements for signal transmission optical fibers, and low measurement accuracy, and achieve Excellent up-conversion strength, improved application range, and accurate results
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Embodiment 1
[0025] Doped sapphire laser crystal material Cr 4+ / Ho 3+ / Mg 2+ / Ti 3+ :Al 2 o 3 .
[0026] In doped sapphire laser crystal materials, Cr 4+ 、Ho 3+ , Mg 2+ The molar ratio of Cr is 4:2:1; Cr 4+ 、Ho 3+ , Mg 2+ The total number of moles and Ti 3+ :Al 2 o 3 The molar ratio is 3:100.
[0027] The preparation method of described doped sapphire laser crystal material, comprises the following steps:
[0028] (1) place the crystal growth mold that the middle part is provided with capillary in the crucible middle part, the raw material Al 2 o 3 、Ti 2 o 3 , CrO 2 、Ho 2 o 3 , MgO is placed in the crucible, and the crucible is heated to melt the raw materials to form a melt;
[0029] (2) Connect the seed crystal to the top of the mold to pull the melt, so that the seed crystal continuously rearranges atoms or molecules at the interface of the melt, and gradually solidifies as the temperature drops to grow a single crystal with the same shape as the edge of the mold....
Embodiment 2
[0031] Doped sapphire laser crystal material Cr 4+ / Ho 3+ / Mg 2+ / Ti 3+ :Al 2 o 3 .
[0032] In doped sapphire laser crystal materials, Cr 4+ 、Ho 3+ , Mg 2+ The molar ratio of Cr is 3:3:1; Cr 4+ 、Ho 3+ , Mg 2+ The total number of moles and Ti 3+ :Al 2 o 3 The molar ratio is 4:100.
[0033] The preparation method of described doped sapphire laser crystal material, comprises the following steps:
[0034] (1) place the crystal growth mold that the middle part is provided with capillary in the crucible middle part, the raw material Al 2 o 3 、Ti 2 o3 , CrO 2 、Ho 2 o 3 , MgO is placed in the crucible, and the crucible is heated to melt the raw materials to form a melt;
[0035] (2) Connect the seed crystal to the top of the mold to pull the melt, so that the seed crystal continuously rearranges atoms or molecules at the interface of the melt, and gradually solidifies as the temperature drops to grow a single crystal with the same shape as the edge of the mold. ...
Embodiment 3
[0037] Doped sapphire laser crystal material Cr 4+ / Ho 3+ / Mg 2+ / Ti 3+ :Al 2 o 3 .
[0038] In doped sapphire laser crystal materials, Cr 4+ 、Ho 3+ , Mg 2+ The molar ratio of Cr is 5:1:1; Cr 4+ 、Ho 3+ , Mg 2+ The total number of moles and Ti 3+ :Al 2 o 3 The molar ratio is 2:100.
[0039] The preparation method of described doped sapphire laser crystal material, comprises the following steps:
[0040] (1) place the crystal growth mold that the middle part is provided with capillary in the crucible middle part, the raw material Al 2 o 3 、Ti 2 o 3 , CrO 2 、Ho 2 o 3 , MgO is placed in the crucible, and the crucible is heated to melt the raw materials to form a melt;
[0041] (2) Connect the seed crystal to the top of the mold to pull the melt, so that the seed crystal continuously rearranges atoms or molecules at the interface of the melt, and gradually solidifies as the temperature drops to grow a single crystal with the same shape as the edge of the mold....
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