A kind of high dielectric lanthanum oxide thin film and its preparation method and application

Abstract

The invention provides a lanthanum oxide thin film with high dielectric property, and a preparation method and application thereof. The method includes spin coat lanthanum oxide solution on mica substrate to obtain lanthanum oxide precursor film, sequentially carrying out pre-annealing treatment, and carry out high-temperature annealing treatment at 400-600 DEG C to obtain high-dielectric lanthanum oxide film. The invention improves the compactness of the lanthanum oxide thin film, increases its dielectric constant and reduces its leakage current through high-temperature annealing treatment. The flexible MIM diode made of the high-dielectric lanthanum oxide thin film has stable low leakage current and high breakdown field strength.

Description

technical field [0001] The invention belongs to the technical field of organic electronics, and in particular relates to a high-dielectric lanthanum oxide film and its preparation method and application. Background technique [0002] Lanthanum oxide thin film is an insulating layer material with a high dielectric constant, and has broad application prospects in flexible devices such as flexible transistors and flexible diodes. At present, the relatively mature preparation techniques of lanthanum oxide thin films mainly rely on vacuum technologies such as magnetron sputtering, chemical vapor deposition and atomic layer deposition. The process of preparing thin films by these technologies is relatively complicated, and the purchase price of equipment is also quite expensive, which increases the manufacturing cost of the entire transistor. Compared with these relatively mature preparation methods, the high dielectric and low leakage lanthanum oxide thin film materials prepared...

AI Technical Summary

Problems solved by technology

However, due to the influence of the quantum tunneling effect, reducing the thickness of the insulating layer will cause the leakage current to increase exponentially. Therefore, effectively reducing the thickness of the insulating layer while ensuring a low leakage current has always been a major challenge in the design of the insulating layer.

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