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U-type source slot VDMOSFET device with Schottky diode

A Schottky diode, U-shaped technology, used in diodes, semiconductor devices, electrical components, etc., can solve the problem of increasing on-resistance and forward voltage drop of diodes, increasing circuit design complexity and cost, and power-on deterioration. and other problems, to achieve the effect of simple circuit structure and reduction of Schottky diodes

Active Publication Date: 2019-01-15
XIDIAN UNIV
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  • Application Information

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Problems solved by technology

[0003] At the same time, VDMOSFET is used as a power switch in the converter. When its body diode continues to flow forward current as a freewheeling path, the phenomenon of "power-on deterioration" will occur, which will increase the on-resistance and the forward conduction voltage drop of the diode. and cause reliability issues
Therefore, in practical applications, a Schottky diode with a turn-on voltage lower than the body diode is usually connected in parallel at both ends of the source and drain of the device to provide a freewheeling path and ensure that the body diode will not conduct. This method greatly increases reduce the complexity and cost of circuit design

Method used

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  • U-type source slot VDMOSFET device with Schottky diode

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Embodiment Construction

[0028] In the following description, many technical details are proposed in order to enable readers to better understand the application. However, those skilled in the art can understand that the technical solutions claimed in this application can be realized even without these technical details and various changes and modifications based on the following implementation modes.

[0029] Explanation of terms involved in this application:

[0030] VDMOSFET, (vertical double-diffused MOSFET): vertical double-diffused metal oxide semiconductor field effect transistor.

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific examples, but the implementation of the present invention is not limited thereto.

[0032] The first embodiment of the present application relates to a U-shaped source-trough VDMOSFET device integrating a Schottky diode. ...

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Abstract

The invention relates to the field of integrated circuits, and discloses a U-type source-slot VDMOSFET device integrating a Schottky diode, comprising: a substrate (10), a drain (11), a N-drift region(8), and a P+ source trench protection. a region (9) located in the N-drift region (8); a source (6) located above the P+ source trench protection region (9); and a P+ ohmic contact region (5) located in the N-drift region (8); a P-type base region (7) located in the N-drift region (8); an N+ source region (3) located above the P-type base region (7); a gate-source isolation layer (4), Located above the N+ source region (3); the gate dielectric (2), the gate (1); the interface between the source (6) and the N-drift region (8) is a Schottky contact. The device makes the circuit structure simpler, improves the reliability of the device and reduces the complexity and cost of the device design.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a U-shaped source-trough VDMOSFET device integrating Schottky diodes. Background technique [0002] Silicon carbide, a wide bandgap semiconductor material, has a large band gap, a high critical breakdown electric field, and excellent physical and chemical properties such as high thermal conductivity and high electron saturation drift velocity. It is suitable for making high temperature, high pressure, high power, radiation resistant illuminated semiconductor devices. In the field of power electronics, power MOSFET has been widely used, it has the characteristics of simple gate drive and short switching time. [0003] At the same time, VDMOSFET is used as a power switch in the converter. When its body diode continues to flow forward current as a freewheeling path, the phenomenon of "power-on deterioration" will occur, which will increase the on-resistance and the forward conduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/7806
Inventor 汤晓燕陈辉张玉明宋庆文张艺蒙
Owner XIDIAN UNIV
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