A kind of preparation method of vanadium selenide doped selenium material

A technology of vanadium selenide and composite materials, which is applied in the field of preparation of vanadium selenide doped with selenium materials, can solve the problems of limited application and lack of band gap in graphene, and achieve fast electron transfer rate, good electrocatalytic performance and low production cost low effect

Active Publication Date: 2021-04-20
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although graphene has many excellent properties, its application in electronic devices such as transistors is limited due to the lack of a band gap in graphene, while graphene-like structural materials have a variety of band gaps, and the band gap can be adjusted. Extensive electrical behavior

Method used

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  • A kind of preparation method of vanadium selenide doped selenium material
  • A kind of preparation method of vanadium selenide doped selenium material
  • A kind of preparation method of vanadium selenide doped selenium material

Examples

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Effect test

Embodiment 1

[0031] 1) First, weigh 0.976g of NaBH 4 , dissolve it in 20mL of deionized water, add 0.834g of selenium powder, and stir magnetically for 40min to obtain a clear NaHSe solution. The prepared solution is slowly poured into 10mL of absolute ethanol under nitrogen flow to obtain mixture;

[0032] 2) Transfer the mixed solution obtained in step 1) to a polytetrafluoroethylene-lined high-pressure reactor, and weigh ammonium metavanadate according to V(mol):Se(mol)=1:2 and add it to the reactor , control the filling ratio of the solution in the reactor at 40%, seal the reactor, place it in an oven and react at 120°C for 10h;

[0033] 3) After the reaction is finished, wash with deionized water and absolute ethanol for 5 times, then vacuum dry and grind to obtain the precursor;

[0034] 4) Put the precursor obtained in step 3) into a magnetic boat, and place it in a low-temperature tube furnace, and pump the inside of the low-temperature tube furnace tube into a vacuum environment...

Embodiment 2

[0041] 1) First, weigh 1.085g of NaBH 4 , dissolve it in 20mL of deionized water, add 0.957g of selenium powder, and stir magnetically for 40min to obtain a clear NaHSe solution. Slowly pour the prepared above solution into 10mL of absolute ethanol under nitrogen flow to obtain mixture;

[0042]2) Transfer the mixed solution obtained in step 1) to a polytetrafluoroethylene-lined high-pressure reactor, and weigh ammonium metavanadate according to V(mol):Se(mol)=1.5:2 and add it to the reactor , control the filling ratio of the solution in the reactor at 50%, seal the reactor, place it in an oven and react at 150°C for 8 hours;

[0043] 3) After the reaction is finished, wash with deionized water and absolute ethanol for 5 times, then vacuum dry and grind to obtain the precursor;

[0044] 4) Put the precursor obtained in step 3) into a magnetic boat, and place it in a low-temperature tube furnace, and pump the inside of the low-temperature tube furnace tube into a vacuum envir...

Embodiment 3

[0048] 1) First, weigh 1.031g of NaBH 4 , dissolve it in 20mL of deionized water, add 0.896g of selenium powder, and stir magnetically for 40min to obtain a clear NaHSe solution. The prepared solution is slowly poured into 10mL of absolute ethanol under nitrogen flow to obtain mixture;

[0049] 2) Transfer the mixed solution obtained in step 1) to a polytetrafluoroethylene-lined high-pressure reactor, and weigh ammonium metavanadate according to V(mol):Se(mol)=1.3:2 and add it to the reactor , control the filling ratio of the solution in the reactor at 60%, seal the reactor, place it in an oven and react at 140°C for 9 hours;

[0050] 3) After the reaction is finished, wash with deionized water and absolute ethanol for 5 times, then vacuum dry and grind to obtain the precursor;

[0051] 4) Put the precursor obtained in step 3) into a magnetic boat, and place it in a low-temperature tube furnace, and pump the inside of the low-temperature tube furnace tube into a vacuum envir...

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Abstract

The invention discloses a method for preparing a vanadium selenide-doped selenium material. The vanadium selenide-doped selenium material is prepared by a two-step method. The process is simple, the preparation cycle is short, the conditions are easy to control, and the production cost is low. The prepared vanadium selenide doped selenium The heteroselenium material has a lamellar structure, which is more conducive to the full contact between the electrocatalyst and the electrolyte, exposing more electrocatalytic site activity, so it has a faster electron transfer rate, thereby improving its electrocatalyst. Catalytic performance, the vanadium selenide doped selenium material prepared by the present invention has good electrocatalytic performance, and still maintains high HER electrocatalytic activity and stability under alkaline conditions.

Description

technical field [0001] The invention belongs to the field of preparation of electrocatalytic energy materials, and in particular relates to a preparation method of vanadium selenide doped selenium material. Background technique [0002] In recent years, there has been increasing interest in clean, safe and efficient energy storage technologies. The advent and development of graphene materials have promoted the research upsurge of graphene-like two-dimensional layered materials. Although graphene has many excellent properties, its application in electronic devices such as transistors is limited due to the lack of a band gap in graphene, while graphene-like structural materials have a variety of band gaps, and the band gap can be adjusted. Extensive electrical behavior. In particular, graphene-like two-dimensional layered structure materials also show broad application prospects in the fields of light, electricity, lubrication, catalysis, and electrochemical energy storage d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/057
CPCB01J27/0573B01J35/0033
Inventor 曹丽云何丹阳冯亮亮黄剑锋吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
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