Electrochemical transistor sensor with anti-interference performance, anti-interference method and application thereof

A transistor and electrochemical technology, applied in the field of electrochemistry, can solve the problems of unsatisfactory anti-interference, poor selectivity and anti-interference ability of electrochemical transistor sensors, etc., and achieve the effect of improving anti-interference and solving anti-interference

Inactive Publication Date: 2019-01-25
HUBEI UNIV
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Problems solved by technology

However, the poor selectivity and anti-interference ability of electrochemical transistor sensors have been a difficult problem to solve
[0003] For example, in CN108593747A "Enzyme-free electrochemical transistor sensor for glucose and its detection method for glucose", the electrochemical transistor with graphene as the channel realizes the highly sensitive detection of glucose, but the device is resistant to other substances in the solution. Intrusiveness is not ideal

Method used

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  • Electrochemical transistor sensor with anti-interference performance, anti-interference method and application thereof
  • Electrochemical transistor sensor with anti-interference performance, anti-interference method and application thereof
  • Electrochemical transistor sensor with anti-interference performance, anti-interference method and application thereof

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Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] The preparation method of the electrochemical transistor sensor, the main steps are as follows:

[0025] In the first step, a chromium layer and a gold layer are plated on the substrate, and the gold layer overlaps the chromium layer as the electrodes of the electrochemical transistor sensor, and the source and drain are respectively selected, and the electrode between the source and the drain is the chemical transistor sensor channel;

[0026] In the second step, the single-layer graphene is transferred to the channel of the electrochemical transistor sensor obtained in the first step by wet transfer, and the source, drain and channel of the electrochemical transistor sensor with the single-layer graphene as the channel are obtained. ;

[0027] The third step is to electrodeposit nanocomposite particles of gold and graphene on the cleaned glassy carbon electrode by cyclic voltammetry as the gate of the electrochemical transistor sensor;

[0028] Fourth, a Nafion film...

Embodiment 1

[0039] An electrochemical transistor sensor with anti-interference performance, its difference from the comparative example is: a Nafion film protective layer is provided on the channel, and the specific method is: by dripping 10 μL of mass concentration of 0.5wt on the graphene channel % Nafion solution to form a protective layer of Nafion film.

[0040] In order to verify the anti-interference performance of the electrochemical transistor sensor with anti-interference performance, several common interfering substances were also selected: K + , Ca 2+ , Mg 2+ , NH 4 + , Cl - , NO 3 - , SO 4 2- 、PO 4 3- 、CH 3 COO - Carry out selectivity test with glucose, the specific method is as follows:

[0041] Setting the V of the SourceMeter DS = 0.05V, V G =0.8V, the electrochemical transistor sensor with anti-interference performance is immersed in the buffer solution, and the sodium nitrite solution of 1mM and common interfering substances: K + , Ca 2+ ,Mg 2+ ,NH 4 ...

Embodiment 2

[0044] An electrochemical transistor sensor with anti-interference performance, its difference from the comparative example is: a polysaccharide film protective layer is provided on the channel, and the specific method is: drop 15 μL of mass concentration of 50 mg / mL of chitosan solution was used to form a protective layer of chitosan film by uniform gel method.

[0045] In order to verify the anti-interference performance of the electrochemical transistor sensor with anti-interference performance, several common interfering substances were also selected: K + , Ca 2+ , Mg 2+ , NH 4 + , Cl - , NO 3 - , SO 4 2- 、PO 4 3- 、CH 3 COO - Carry out selectivity test with glucose, the specific method is as follows:

[0046] Setting the V of the SourceMeter DS = 0.05V, V G =0.8V, the electrochemical transistor sensor with anti-interference performance is immersed in the buffer solution, and the sodium nitrite solution of 1mM and common interfering substances: K + , Ca 2+...

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Abstract

The invention relates to a method for improving the anti-interference performance of an electrochemical transistor sensor. The electrochemical transistor sensor comprises a source electrode, a drain electrode and a grid electrode, wherein a channel of the electrochemical transistor sensor is arranged between the source electrode and the drain electrode. The electrochemical transistor sensor is characterized in that the channel is provided with a Nafion thin-film protective layer and/or a glycan thin-film protective layer, or the grid electrode is externally sheathed with a sand-core glass pipewith microporous ceramic at the lower end, and the channel or the grid electrode is separated to shield the response of the electrochemical transistor sensor on interfering substances. The optimization method of the electrochemical transistor sensor has the characteristic that the response of the interfering substances is shielded under the premise of no influence on the response of a device to substances to be detected.

Description

technical field [0001] The invention relates to a method for improving the anti-interference performance of an electrochemical transistor sensor, belonging to the field of electrochemistry. Background technique [0002] In recent years, as a new type of electrochemical detection method, the electrochemical transistor sensor is considered to be a new type of sensor due to its inherent amplification characteristics and high sensitivity. At the same time, the organic electrochemical transistor can be used in aqueous solutions with very stable performance and low operating voltage. Promising methods for electroanalysis and detection. Therefore, organic electrochemical transistors have promising applications in low-cost, high-sensitivity biosensors, such as glucose, dopamine, uric acid, ions, ascorbic acid, bacteria, cells, proteins, etc. However, the poor selectivity and anti-interference ability of electrochemical transistor sensors have always been a difficult problem to solv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/4143
Inventor 常钢周扬何云斌何汉平蔡志伟马明宇陶甜
Owner HUBEI UNIV
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