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Nano array structure lens, preparation method and deep ultraviolet led

A nano-array and lens technology, applied in nano-technology, semiconductor devices, electrical components, etc., can solve the problems of limiting the light extraction efficiency of deep ultraviolet LEDs, unfavorable packaging reliability and enhancement of deep ultraviolet LED light extraction efficiency, etc.

Inactive Publication Date: 2019-01-25
EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The non-uniformity and micron-scale morphology of the array structure of the lens prepared by the above method limit its enhancement of the light extraction efficiency of the deep ultraviolet LED, and it is also not conducive to industrial manufacturing
In addition, lenses with an array structure made of some organic polymers may absorb deep ultraviolet light, which is not conducive to the improvement of light extraction efficiency and packaging reliability of deep ultraviolet LEDs

Method used

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  • Nano array structure lens, preparation method and deep ultraviolet led
  • Nano array structure lens, preparation method and deep ultraviolet led
  • Nano array structure lens, preparation method and deep ultraviolet led

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1 This embodiment provides a method for preparing a lens with a nano-array structure. The specific steps include:

[0013] (1) Covering protective layer: A silicon dioxide protective layer with a thickness of 100nm is evaporated on a circular sapphire substrate with a diameter of 5.08 cm, and the evaporation temperature is controlled at 300°C;

[0014] (2) Photolithography: spin-coating photoresist with a thickness of 600nm on the silicon dioxide protective layer processed in step (1), and cover the photoresist with triangular array holes with a diameter of 2.75μm Using an ultraviolet light source with an emission wavelength of 365 nm to perform ultraviolet projection exposure on the lithography plate for 70 seconds;

[0015] (3) Dry etching protective layer: Plasma etching the silicon dioxide protective layer after step (2) in a mixed atmosphere of CF4 and O2 so that array holes appear on the silicon dioxide so that part of the silicon dioxide The sapphire substra...

Embodiment 2

[0021] This embodiment also provides a method for preparing a lens with a nano-array structure. The difference from Embodiment 1 is that the wet etching time is 8 minutes. The depth of the nano-array groove of the nano-array structure lens obtained in this embodiment is 230 nm, and the radius of the bottom surface of the cone bottom of the frustum is 340 nm;

[0022] This embodiment also provides a deep ultraviolet LED, including the array structure lens provided in this embodiment. The deep ultraviolet LED was tested, and its radiant light power was 15.7 milliwatts when the driving current was 300 mA.

Embodiment 3

[0024] This embodiment also provides a method for preparing a lens with a nano-array structure. The difference from Embodiment 1 is that the wet etching time is 10 minutes. The depth of the nano-array groove of the nano-array structure lens obtained in this embodiment is 240 nm, and the radius of the bottom surface of the cone bottom of the frustum is 350 nm;

[0025] This embodiment also provides a deep ultraviolet LED, including the array structure lens provided in this embodiment. The deep ultraviolet LED was tested, and its radiant light power was 16.2 milliwatts when the driving current was 300 mA.

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Abstract

The invention provides a preparation method of a nano array structure lens, which comprises the steps of covering a protective layer, photolithography, dry etching the protective layer, wet etching asapphire substrate and removing the protective layer. The preparation method provided by the invention combines nano-lithography and dry-wet etching, and can produce uniform, large-area and easily controlled nano-array on a sapphire substrate, thereby forming a nano-array structure in a lens. The invention also provides a nano array structure lens, which is prepared by the preparation method of the nano array structure lens. The invention also provides a deep ultraviolet LED, comprising an LED chip, an encapsulant and the nano array structure lens. The deep ultraviolet LED has better light extraction efficiency.

Description

Technical field [0001] The present invention relates to the technical field of LED packaging materials, and more specifically, to a method for preparing a lens with a nano-array structure, a lens prepared by the method, and a deep ultraviolet LED formed by the lens. Background technique [0002] AlGaN-based deep ultraviolet LED (λ <300nm) due to its wide range of potential applications, such as disinfection, air and water purification, biochemical detection and optical communication, has attracted the attention of many scientists. However, the low light extraction efficiency of deep-ultraviolet LEDs still cannot meet current application requirements. This is mainly due to the large refractive index difference between the outermost optical lens and air, which results in a strong total reflection effect of part of the light at the interface, which is not conducive to deep UV LED emits light. [0003] As we all know, the array structure in the lens has a scattering effect on the e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/58B82Y40/00
CPCB82Y40/00H01L33/58H01L2933/0058
Inventor 梁仁瓅许琳琳王昊陈景文王帅陈长清戴江南
Owner EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH